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UZDT1049 PDF预览

UZDT1049

更新时间: 2024-11-06 21:12:43
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
3页 56K
描述
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

UZDT1049 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.39最大集电极电流 (IC):5 A
集电极-发射极最大电压:25 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):35JESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

UZDT1049 数据手册

 浏览型号UZDT1049的Datasheet PDF文件第2页浏览型号UZDT1049的Datasheet PDF文件第3页 
SM-8 DUAL NPN MEDIUM POWER  
ZDT1049  
HIGH GAIN TRANSISTORS  
ISSUE 1 – JANUARY 1996  
C1  
C1  
C2  
C2  
B1  
E1  
B2  
E2  
SM-8  
(8 LEAD SOT223)  
PARTMARKING DETAIL – T1049  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
80  
25  
V
5
V
20  
5
A
Continuous Collector Current  
Base Current  
IC  
A
IB  
500  
mA  
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2.25  
2.75  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
18  
22  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
3 - 360  

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