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UZDM4306N PDF预览

UZDM4306N

更新时间: 2024-11-27 21:11:15
品牌 Logo 应用领域
捷特科 - ZETEX 开关光电二极管晶体管
页数 文件大小 规格书
3页 57K
描述
Small Signal Field-Effect Transistor, 2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SM-8, 8 PIN

UZDM4306N 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SM-8, 8 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.17
配置:SEPARATE, 2 ELEMENTS最小漏源击穿电压:60 V
最大漏极电流 (ID):2 A最大漏源导通电阻:0.33 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):30 pF
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
功耗环境最大值:3 W认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UZDM4306N 数据手册

 浏览型号UZDM4306N的Datasheet PDF文件第2页浏览型号UZDM4306N的Datasheet PDF文件第3页 
SM-8 DUAL N-CHANNEL ENHANCEMENT  
ZDM4306N  
MODE MOSFETS  
ISSUE 1 - NOVEMBER 1995  
D1  
D1  
D2  
D2  
G1  
S1  
G2  
S2  
SM-8  
(8 LEAD SOT223)  
PARTMARKING DETAIL – M4306N  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
60  
Continuous Drain Current at Tam b=25°C  
Pulsed Drain Current  
ID  
2
15  
A
IDM  
A
Gate-Source Voltage  
VGS  
V
± 20  
Operating and Storage Tem perature Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tam b = 25°C*  
Any single die on”  
Both die on” equally  
2.5  
3.0  
W
W
Derate above 25°C*  
Any single die on”  
Both die on” equally  
20  
24  
m W/ °C  
m W/ °C  
Therm al Resistance - J unction to Am bient*  
Any single die on”  
Both die on” equally  
50.0  
41.6  
°C/ W  
°C/ W  
* The power which can be dissipated assum ing the device is m ounted in a typical m anner on a PCB  
with copper equal to 2 inches square.  
Note:  
This data is derived from developm ent m aterial and does not necessarily m ean that the device will  
go into production  
3 - 321  

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