Datasheet > UTD-1000R

UTD-1000R

更新时间： 2024-09-18 15:56:19

品牌	Logo	应用领域
安捷伦 - AGILENT		商用集成电路
页数	文件大小	规格书
4页	28K
描述
Consumer Circuit, MBCY5

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中文翻译

获取价格

技术参数
数据手册

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UTD-1000R 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	, CAN4+1,.3	Reach Compliance Code：	unknown
风险等级：	5.92	商用集成电路类型：	CONSUMER CIRCUIT
JESD-30 代码：	O-MBCY-W4	JESD-609代码：	e0
端子数量：	5	封装主体材料：	METAL
封装等效代码：	CAN4+1,.3	封装形状：	ROUND
封装形式：	CYLINDRICAL	电源：	15 V
认证状态：	Not Qualified	子类别：	Other Consumer ICs
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	BOTTOM	Base Number Matches：	1

UTD-1000R 数据手册

Avantek Products

Analog Level Detectors

10 to 1000 MHz

Technical Data

UTD-1000/1001

Features

Description

Pin Configuration

TO-8F

• –120 mV Output for –10 dBm The UTD-1000 has an input

GROUND

impedance of 50 ohms. The

UTD-1001 has an input impedance

of greater than 300 ohms. In all

other respects the detectors are

similar. The level detector con-

sists of an amplifier stage that

drives a Schottky-barrier detector

diode. Matched back-to-back

silicon diodes which are closely

thermally-coupled to the detector

provide a DC tracking reference.

• ±1.0 dB Flatness

• 50- or 300-Ohm Impedance

VIDEO

Applications

• Specifically Designed for

System Built-in Test

REFERENCE

• RF/IF Monitor

• Level Control

• UTD-1001 Can Be Used

Without a Coupler in Many

Cases

Schematic

Maximum Ratings

V⁺

Parameter

Maximum

1 mA

RF_IN

–I_D*

Bias Current (diode)

1000

Detector

Continuous RF Input Power

Operating Case Temperature

Storage Temperature

+17.0 dBm

–54°C to +125°C

–62°C to +150°C

+125°C

+I_D*

Reference

“R” Series Burn-In Temperature

Pulse Input Power (1.0 minute max.)

100 mW

Junction Temperature Above Case Temperature

3°C

* Requires external bias resistors

see “Application Note”, Section 7.

Weight: (typical) 2.1 grams

12 3 4

中文翻译

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