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UTD36N03L-TN3-R PDF预览

UTD36N03L-TN3-R

更新时间: 2024-10-30 07:08:55
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
5页 200K
描述
N-CHANNEL ENHANCEMENT MODE

UTD36N03L-TN3-R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.67
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):43.4 A最大漏源导通电阻:0.017 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):173.6 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UTD36N03L-TN3-R 数据手册

 浏览型号UTD36N03L-TN3-R的Datasheet PDF文件第2页浏览型号UTD36N03L-TN3-R的Datasheet PDF文件第3页浏览型号UTD36N03L-TN3-R的Datasheet PDF文件第4页浏览型号UTD36N03L-TN3-R的Datasheet PDF文件第5页 
UNISONIC TECHNOLOGIES CO., LTD  
UTD36N03  
Power MOSFET  
N-CHANNEL  
ENHANCEMENT MODE  
„
FEATURES  
* RDS(ON) = 17m@VGS = 10 V  
* Low capacitance  
* Optimized gate charge  
* Fast switching capability  
* Avalanche energy specified  
„
SYMBOL  
2.Drain  
*Pb-free plating product number: UTD36N03L  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
2
D
D
3
S
S
UTD36N03-TN3-R  
UTD36N03-TN3-T  
UTD36N03L-TN3-R  
UTD36N03L-TN3-T  
TO-252  
TO-252  
G
G
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 5  
Copyright © 2008 Unisonic Technologies Co., Ltd  
QW-R502-179.A  

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