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UTD408-TN3-R PDF预览

UTD408-TN3-R

更新时间: 2024-10-30 12:20:43
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
5页 201K
描述
N-CHANNEL ENHANCEMENT MODE

UTD408-TN3-R 技术参数

生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):18 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):40 A
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UTD408-TN3-R 数据手册

 浏览型号UTD408-TN3-R的Datasheet PDF文件第2页浏览型号UTD408-TN3-R的Datasheet PDF文件第3页浏览型号UTD408-TN3-R的Datasheet PDF文件第4页浏览型号UTD408-TN3-R的Datasheet PDF文件第5页 
UNISONIC TECHNOLOGIES CO., LTD  
UTD408  
Power MOSFET  
N-CHANNEL  
ENHANCEMENT MODE  
„
FEATURES  
* RDS(ON) = 18m@VGS = 10 V  
* Low capacitance  
* Optimized gate charge  
* Fast switching capability  
* Avalanche energy specified  
„
SYMBOL  
2.Drain  
*Pb-free plating product number: UTD408L  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
2
D
D
3
S
S
UTD408-TN3-R  
UTD408-TN3-T  
UTD408L-TN3-R  
UTD408L-TN3-T  
TO-252  
TO-252  
G
G
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 6  
Copyright © 2008 Unisonic Technologies Co., Ltd  
QW-R502-184.A  

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