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UTD413-TN3-R PDF预览

UTD413-TN3-R

更新时间: 2024-10-30 19:59:39
品牌 Logo 应用领域
友顺 - UTC 开关脉冲晶体管
页数 文件大小 规格书
4页 203K
描述
Power Field-Effect Transistor, 12A I(D), 40V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

UTD413-TN3-R 技术参数

生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):30 A表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UTD413-TN3-R 数据手册

 浏览型号UTD413-TN3-R的Datasheet PDF文件第2页浏览型号UTD413-TN3-R的Datasheet PDF文件第3页浏览型号UTD413-TN3-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
UTD413  
Power MOSFET  
P-CHANNEL  
ENHANCEMENT MODE  
„
DESCRIPTION  
The UTD413 can provide excellent RDS(ON) and low gate charge  
by using UTC’s advanced trench technology. The UTD413 is well  
suited for high current load applications with the excellent thermal  
resistance of the TO-252 package. Standard Product UTD413 is  
Pb-free.  
„
FEATURES  
* RDS(ON) < 45m@VGS = -10V  
* RDS(ON) < 69m@VGS = -4.5V  
* Low capacitance  
* Low gate charge  
Lead-free:  
UTD413L  
* Fast switching capability  
* Avalanche energy specified  
Halogen-free: UTD413G  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
UTD413G-TN3-R  
UTD413G-TN3-T  
1
2
D
D
3
S
S
UTD413-TN3-R  
UTD413-TN3-T  
UTD413L-TN3-R  
UTD413L-TN3-T  
TO-252  
TO-252  
G
G
Tape Reel  
Tube  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R502-246.B  

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