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UTD-1001 PDF预览

UTD-1001

更新时间: 2024-09-19 06:18:47
品牌 Logo 应用领域
安捷伦 - AGILENT 射频微波
页数 文件大小 规格书
4页 28K
描述
Linear Detector, 10MHz Min, 1000MHz Max, 17dBm Input Power-Max

UTD-1001 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.26
特性阻抗:50 Ω构造:MODULE
最大输入功率 (CW):17 dBmJESD-609代码:e0
最大工作频率:1000 MHz最小工作频率:10 MHz
最高工作温度:125 °C最低工作温度:-54 °C
射频/微波设备类型:LINEAR DETECTOR端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

UTD-1001 数据手册

 浏览型号UTD-1001的Datasheet PDF文件第2页浏览型号UTD-1001的Datasheet PDF文件第3页浏览型号UTD-1001的Datasheet PDF文件第4页 
H
Avantek Products  
Analog Level Detectors  
10 to 1000 MHz  
Technical Data  
UTD-1000/1001  
Features  
Description  
Pin Configuration  
TO-8F  
• –120 mV Output for –10 dBm The UTD-1000 has an input  
GROUND  
Pin  
impedance of 50 ohms. The  
UTD-1001 has an input impedance  
of greater than 300 ohms. In all  
other respects the detectors are  
similar. The level detector con-  
sists of an amplifier stage that  
drives a Schottky-barrier detector  
diode. Matched back-to-back  
silicon diodes which are closely  
thermally-coupled to the detector  
provide a DC tracking reference.  
±1.0 dB Flatness  
• 50- or 300-Ohm Impedance  
RF  
IN  
VIDEO  
Applications  
• Specifically Designed for  
System Built-in Test  
+
V
REFERENCE  
• RF/IF Monitor  
• Level Control  
• UTD-1001 Can Be Used  
Without a Coupler in Many  
Cases  
Schematic  
Maximum Ratings  
V+  
Parameter  
Maximum  
1 mA  
RFIN  
–ID*  
Bias Current (diode)  
1000  
pF  
Detector  
R
Continuous RF Input Power  
Operating Case Temperature  
Storage Temperature  
+17.0 dBm  
–54°C to +125°C  
–62°C to +150°C  
+125°C  
+ID*  
Reference  
“R” Series Burn-In Temperature  
Pulse Input Power (1.0 minute max.)  
R
100 mW  
Junction Temperature Above Case Temperature  
3°C  
* Requires external bias resistors  
see Application Note, Section 7.  
Weight: (typical) 2.1 grams  

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