Datasheet > UPD45128841G5-A75LT-9JF

UPD45128841G5-A75LT-9JF

更新时间： 2024-10-29 23:40:15

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管动态存储器时钟
页数	文件大小	规格书
89页	698K
描述
SDRAM\|4X4MX8\|CMOS\|TSOP\|54PIN\|PLASTIC

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UPD45128841G5-A75LT-9JF 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

µPD45128441-T, 45128841-T, 45128163-T

128M-bit Synchronous DRAM

4-bank, LVTTL

WTR (Wide Temperature Range)

Description

The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access

memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).

These products are packaged in 54-pin TSOP (II).

Features

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0(A13) and BA1(A12)

• Byte control (×16) by LDQM and UDQM

• Programmable Wrap sequence (Sequential / Interleave)

• Programmable burst length (1, 2, 4, 8 and full page)

• Programmable /CAS latency (2 and 3)

• Ambient temperature (T^A): −20 to + 85°C

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• ×4, ×8, ×16 organization

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible inputs and outputs

• 4,096 refresh cycles / 64 ms

• Burst termination by Burst stop command and Precharge command

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0218N20 (Ver. 2.0)

Date Published November 2001 (K) Japan

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

12 3 4 5 6 7...89

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与UPD45128841G5-A75LT-9JF相关器件

型号	品牌	获取价格	描述	数据表
UPD45128841G5-A75T-9JF	ETC	获取价格	SDRAM\|4X4MX8\|CMOS\|TSOP\|54PIN\|PLASTIC
UPD45128841G5-A80	NEC	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A80-9JF	NEC	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A80-9JF	ELPIDA	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A80L-9JF	ELPIDA	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A80L-9JF	NEC	获取价格	Synchronous DRAM, 16MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
UPD45128841G5-A80LI-9JF	ELPIDA	获取价格	Synchronous DRAM, 16MX8, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54
UPD45128841G5-A80LT-9JF	ETC	获取价格	SDRAM\|4X4MX8\|CMOS\|TSOP\|54PIN\|PLASTIC
UPD45128841G5-A80T-9JF	ETC	获取价格	SDRAM\|4X4MX8\|CMOS\|TSOP\|54PIN\|PLASTIC
UPD4516161AG5-A10-9NF	NEC	获取价格	Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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