5秒后页面跳转
UPD448012GY-B10X-MJH PDF预览

UPD448012GY-B10X-MJH

更新时间: 2024-11-20 22:08:47
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
24页 145K
描述
8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

UPD448012GY-B10X-MJH 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:12 X 18 MM, PLASTIC, TSOP1-48Reach Compliance Code:compliant
风险等级:5.84最长访问时间:100 ns
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:12 mm
Base Number Matches:1

UPD448012GY-B10X-MJH 数据手册

 浏览型号UPD448012GY-B10X-MJH的Datasheet PDF文件第2页浏览型号UPD448012GY-B10X-MJH的Datasheet PDF文件第3页浏览型号UPD448012GY-B10X-MJH的Datasheet PDF文件第4页浏览型号UPD448012GY-B10X-MJH的Datasheet PDF文件第5页浏览型号UPD448012GY-B10X-MJH的Datasheet PDF文件第6页浏览型号UPD448012GY-B10X-MJH的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD448012-X  
8M-BIT CMOS STATIC RAM  
512K-WORD BY 16-BIT  
EXTENDED TEMPERATURE OPERATION  
Description  
The µPD448012-X is a high speed, low power, 8,388,608 bits (524,288 words by 16 bits) CMOS static RAM.  
The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.  
The µPD448012-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).  
Features  
524,288 words by 16 bits organization  
Fast access time: 55, 70, 85, 100, 120 ns (MAX.)  
Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)  
Low voltage operation  


(B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V)  
Low VCC data retention : 1.0 V (MIN.)  
Operating ambient temperature: TA = –25 to +85°C  
Output Enable input for easy application  
Two Chip Enable inputs: /CE1, CE2  
Part number  
Access time  
ns (MAX.)  
Operating supply Operating ambient  
Supply current  
At standby  
voltage  
V
temperature  
°C  
At operating  
mA (MAX.)  
At data retention  
µA (MAX.)  
µA (MAX.)  
45 Note  
45  
15  
6



µPD448012-BxxX  
µPD448012-CxxX  
55, 70, 85, 100  
70, 85, 100, 120  
2.7 to 3.6  
2.2 to 3.6  
25 to +85  
Note Cycle time 70 ns, µPD448012-B55X : 50 mA  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M14466EJ5V0DS00 (5th edition)  
Date Published July 2001 NS CP (K)  
Printed in Japan  
The mark shows major revised points.  
1999  
©

与UPD448012GY-B10X-MJH相关器件

型号 品牌 获取价格 描述 数据表
UPD448012GY-B10X-MJH-A NEC

获取价格

暂无描述
UPD448012GY-B55X-MJH NEC

获取价格

8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD448012GY-B55X-MJH RENESAS

获取价格

512KX16 STANDARD SRAM, 55ns, PDSO48, 12 X 18 MM, PLASTIC, TSOP1-48
UPD448012GY-B55X-MJH-A NEC

获取价格

暂无描述
UPD448012GY-B70X-MJH NEC

获取价格

8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD448012GY-B70X-MJH-A NEC

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PDSO48, 12 X 18 MM, PLASTIC, TSOP1-48
UPD448012GY-B85X-MJH NEC

获取价格

8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD448012GY-B85X-MJH-A NEC

获取价格

Standard SRAM, 512KX16, 85ns, CMOS, PDSO48, 12 X 18 MM, PLASTIC, TSOP1-48
UPD448012GY-C10X-MJH NEC

获取价格

8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD448012GY-C10X-MJH-A NEC

获取价格

暂无描述