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UPD448012GY-C85X-MJH-A PDF预览

UPD448012GY-C85X-MJH-A

更新时间: 2024-11-21 13:15:15
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日电电子 - NEC 存储内存集成电路静态存储器光电二极管
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UPD448012GY-C85X-MJH-A 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD448012-X  
8M-BIT CMOS STATIC RAM  
512K-WORD BY 16-BIT  
EXTENDED TEMPERATURE OPERATION  
Description  
The µPD448012-X is a high speed, low power, 8,388,608 bits (524,288 words by 16 bits) CMOS static RAM.  
The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.  
The µPD448012-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).  
Features  
524,288 words by 16 bits organization  
Fast access time: 55, 70, 85, 100, 120 ns (MAX.)  
Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)  
Low voltage operation  


(B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V)  
Low VCC data retention : 1.0 V (MIN.)  
Operating ambient temperature: TA = –25 to +85°C  
Output Enable input for easy application  
Two Chip Enable inputs: /CE1, CE2  
Part number  
Access time  
ns (MAX.)  
Operating supply Operating ambient  
Supply current  
At standby  
voltage  
V
temperature  
°C  
At operating  
mA (MAX.)  
At data retention  
µA (MAX.)  
µA (MAX.)  
45 Note  
45  
15  
6



µPD448012-BxxX  
µPD448012-CxxX  
55, 70, 85, 100  
70, 85, 100, 120  
2.7 to 3.6  
2.2 to 3.6  
25 to +85  
Note Cycle time 70 ns, µPD448012-B55X : 50 mA  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M14466EJ5V0DS00 (5th edition)  
Date Published July 2001 NS CP (K)  
Printed in Japan  
The mark shows major revised points.  
1999  
©

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