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UPD4481161GF-A75Y-A

更新时间： 2024-11-21 13:15:15
品牌 Logo 应用领域
日电电子 - NEC 静态存储器
页数 文件大小 规格书
28页 323K
描述
ZBT SRAM, 512KX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

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UPD4481161GF-A75Y-A 技术参数

生命周期：Obsolete零件包装代码：QFP
包装说明：LQFP,针数：100
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.8
最长访问时间：7.5 ns其他特性：FLOW-THROUGH ARCHITECTURE
JESD-30 代码：R-PQFP-G100JESD-609代码：e6
长度：20 mm内存密度：8388608 bit
内存集成电路类型：ZBT SRAM内存宽度：16
功能数量：1端子数量：100
字数：524288 words字数代码：512000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.7 mm
最大供电电压 (Vsup)：3.465 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN BISMUTH端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

UPD4481161GF-A75Y-A 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µ
PD4481161, 4481181, 4481321, 4481361  
8M-BIT ZEROSBTM SRAM  
FLOW THROUGH OPERATION  
Description  
The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a  
262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with  
advanced CMOS technology using full CMOS six-transistor memory cell.  
The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are optimized to eliminate dead cycles for read to  
write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit  
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the  
single clock input (CLK).  
The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are suitable for applications which require  
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.  
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State  
(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes  
normal operation.  
The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are packaged in 100-pin PLASTIC LQFP with a  
1.4 mm package thickness for high density and low capacitive loading.  
Features  
• Low voltage core supply : VDD = 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y)  
VDD = 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y)  
• Synchronous operation  
• Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)  
TA = −40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)  
• 100 percent bus utilization  
• Internally self-timed write control  
• Burst read / write : Interleaved burst and linear burst sequence  
• Fully registered inputs and outputs for flow through operation  
• All registers triggered off positive clock edge  
• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs  
• Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)  
• Asynchronous output enable : /G  
• Burst sequence selectable : MODE  
• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)  
• Separate byte write enable : /BW1 to /BW4 (µPD4481321 and µPD4481361)  
/BW1 and /BW2 (µPD4481161 and µPD4481181)  
• Three chip enables for easy depth expansion  
• Common I/O using three state outputs  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. M15561EJ3V0DS00 (3rd edition)  
The mark  shows major revised points.  
Date Published December 2002 NS CP(K)  
Printed in Japan  
2001  
1234567...28

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 		ZBT SRAM, 512KX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
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 		8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
UPD4481161GF-C85Y NEC

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