Datasheet > UPD4481162GF-A44Y-A

UPD4481162GF-A44Y-A

更新时间： 2024-11-21 14:45:27

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
28页	220K
描述
IC,SYNC SRAM,512KX16,CMOS,QFP,100PIN,PLASTIC

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UPD4481162GF-A44Y-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

UPD4481162GF-A44Y-A 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4481162, 4481182, 4481322, 4481362

8M-BIT ZEROSB^TMSRAM

PIPELINED OPERATION

Description

The μPD4481162 is a 524,288-word by 16-bit, the μPD4481182 is a 524,288-word by 18-bit, the μPD4481322 is a

262,144-word by 32-bit and the μPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD4481162, μPD4481182, μPD4481322 and μPD4481362 are optimized to eliminate dead cycles for read to

write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the

single clock input (CLK).

The μPD4481162, μPD4481182, μPD4481322 and μPD4481362 are suitable for applications which require

synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).

In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal

operation.

The μPD4481162, μPD4481182, μPD4481322 and μPD4481362 are packaged in 100-pin PLASTIC LQFP with a 1.4

mm package thickness for high density and low capacitive loading.

Features

• Low voltage core supply : V_DD= 3.3 ± 0.165 V (-A44, -A50, -A60, -A75, -A44Y, -A50Y, -A60Y, -A75Y)

V_DD= 2.5 ± 0.125 V (-C60, -C75, -C60Y, -C75Y)

• Synchronous operation

• Operating temperature : T_A= 0 to 70 °C (-A44, -A50, -A60, -A75, -C60, -C75)

T_A= −40 to +85 °C (-A44Y, -A50Y, -A60Y, -A75Y, -C60Y, -C75Y)

• 100 percent bus utilization

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs and outputs for pipelined operation

• All registers triggered off positive clock edge

• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 2.8 ns (225 MHz), 3.2 ns (200 MHz), 3.5 ns (167 MHz) , 4.2 ns (133 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4 (μPD4481322 and μPD4481362)

/BW1 and /BW2 (μPD4481162 and μPD4481182)

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M15562EJ4V0DS00 (4th edition)

Date Published February 2006 NS CP(K)

The mark <R> shows major revised points.

Printed in Japan

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...28

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与UPD4481162GF-A44Y-A相关器件

型号	品牌	获取价格	描述	数据表
UPD4481162GF-A50	NEC	获取价格	8M-BIT ZEROSB SRAM PIPELINED OPERATION
UPD4481162GF-A50Y	RENESAS	获取价格	IC,SYNC SRAM,512KX16,CMOS,QFP,100PIN,PLASTIC
UPD4481162GF-A60	NEC	获取价格	8M-BIT ZEROSB SRAM PIPELINED OPERATION
UPD4481162GF-A60Y	NEC	获取价格	暂无描述
UPD4481162GF-A75	NEC	获取价格	8M-BIT ZEROSB SRAM PIPELINED OPERATION
UPD4481162GF-A75-A	NEC	获取价格	暂无描述
UPD4481162GF-A75Y	NEC	获取价格	暂无描述
UPD4481162GF-C50	NEC	获取价格	512KX16 ZBT SRAM, 3.2ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100
UPD4481162GF-C50-A	NEC	获取价格	512KX16 ZBT SRAM, 3.2ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100
UPD4481162GF-C60	NEC	获取价格	8M-BIT ZEROSB SRAM PIPELINED OPERATION

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