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UPD4481181GF-A85Y PDF预览

UPD4481181GF-A85Y

更新时间: 2024-11-21 14:31:35
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
28页 217K
描述
IC,SYNC SRAM,512KX18,CMOS,QFP,100PIN,PLASTIC

UPD4481181GF-A85Y 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
Is Samacsys:NBase Number Matches:1

UPD4481181GF-A85Y 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
μ
PD4481161, 4481181, 4481321, 4481361  
8M-BIT ZEROSBTM SRAM  
FLOW THROUGH OPERATION  
Description  
The μPD4481161 is a 524,288-word by 16-bit, the μPD4481181 is a 524,288-word by 18-bit, the μPD4481321 is a  
262,144-word by 32-bit and the μPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with  
advanced CMOS technology using full CMOS six-transistor memory cell.  
The μPD4481161, μPD4481181, μPD4481321 and μPD4481361 are optimized to eliminate dead cycles for read to  
write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit  
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the  
single clock input (CLK).  
The μPD4481161, μPD4481181, μPD4481321 and μPD4481361 are suitable for applications which require  
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.  
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).  
In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal  
operation.  
The μPD4481161, μPD4481181, μPD4481321 and μPD4481361 are packaged in 100-pin PLASTIC LQFP with a  
1.4 mm package thickness for high density and low capacitive loading.  
Features  
Low voltage core supply : VDD = 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y)  
VDD = 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y)  
Synchronous operation  
Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)  
TA = 40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)  
100 percent bus utilization  
Internally self-timed write control  
Burst read / write : Interleaved burst and linear burst sequence  
Fully registered inputs and outputs for flow through operation  
All registers triggered off positive clock edge  
3.3V or 2.5V LVTTL Compatible : All inputs and outputs  
Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)  
Asynchronous output enable : /G  
Burst sequence selectable : MODE  
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)  
Separate byte write enable : /BW1 to /BW4 (μPD4481321 and μPD4481361)  
/BW1 and /BW2 (μPD4481161 and μPD4481181)  
Three chip enables for easy depth expansion  
Common I/O using three state outputs  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. M15561EJ4V0DS00 (4th edition)  
Date Published February 2006 NS CP(K)  
The mark <R> shows major revised points.  
Printed in Japan  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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