Datasheet > UPD4481161

UPD4481161

更新时间： 2024-11-20 22:40:27

品牌	Logo	应用领域
日电电子 - NEC		静态存储器
页数	文件大小	规格书
28页	323K
描述
8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION

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中文翻译

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UPD4481161 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

PD4481161, 4481181, 4481321, 4481361

8M-BIT ZEROSB^TMSRAM

FLOW THROUGH OPERATION

Description

The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a

262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

advanced CMOS technology using full CMOS six-transistor memory cell.

The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are optimized to eliminate dead cycles for read to

write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the

single clock input (CLK).

The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are suitable for applications which require

synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State

(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes

normal operation.

The µPD4481161, µPD4481181, µPD4481321 and µPD4481361 are packaged in 100-pin PLASTIC LQFP with a

1.4 mm package thickness for high density and low capacitive loading.

Features

• Low voltage core supply : V_DD= 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y)

V_DD= 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y)

• Synchronous operation

• Operating temperature : T_A= 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)

T_A= −40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)

• 100 percent bus utilization

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs and outputs for flow through operation

• All registers triggered off positive clock edge

• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4 (µPD4481321 and µPD4481361)

/BW1 and /BW2 (µPD4481161 and µPD4481181)

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M15561EJ3V0DS00 (3rd edition)

The mark shows major revised points.

Date Published December 2002 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...28

中文翻译

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与UPD4481161相关器件

型号	品牌	获取价格	描述	数据表
UPD4481161GF-A65	NEC	获取价格	8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
UPD4481161GF-A65Y	NEC	获取价格	暂无描述
UPD4481161GF-A65Y-A	NEC	获取价格	ZBT SRAM, 512KX16, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4481161GF-A75	NEC	获取价格	8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
UPD4481161GF-A75-A	NEC	获取价格	ZBT SRAM, 512KX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4481161GF-A75Y-A	NEC	获取价格	ZBT SRAM, 512KX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4481161GF-A85	NEC	获取价格	8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
UPD4481161GF-A85-A	NEC	获取价格	ZBT SRAM, 512KX16, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4481161GF-A85Y	NEC	获取价格	ZBT SRAM, 512KX16, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD4481161GF-A85Y-A	NEC	获取价格	暂无描述

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