是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | MINIMOLD PACKAGE-6 | Reach Compliance Code: | compliant |
风险等级: | 5.6 | 最大集电极电流 (IC): | 0.06 A |
基于收集器的最大容量: | 1.2 pF | 集电极-发射极最大电压: | 12 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 5000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA804T-T1GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, Ultra High Frequency Band, Sili |
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UPA804T-T1-GB | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR |
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UPA804T-T1GB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, Ultra High Frequency Band, Sili |
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UPA805 | NEC |
获取价格 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI |
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UPA805T | NEC |
获取价格 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI |
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UPA805TKB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA805T-KB | NEC |
获取价格 |
暂无描述 |
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UPA805T-KB-A | NEC |
获取价格 |
暂无描述 |
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UPA805TKB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN |
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UPA805T-T1 | NEC |
获取价格 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI |
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