Datasheet > UNR2116Q

UNR2116Q

更新时间： 2024-09-16 23:39:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
18页	283K
描述
TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23

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中文翻译

获取价格

数据手册

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UNR2116Q 数据手册

Transistors with built-in Resistor

UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

(UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z)

Unit: mm

Silicon PNP epitaxial planer transistor

2.8 –⁺0⁰.^.3²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

0.65±0.15

For digital circuits

Features

■

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

■

Mini type package, allowing downsizing of the equipment and

automatic insertion through tape packing and magazine packing.

Resistance by Part Number

■

Marking Symbol (R₁)

(R₂)

10kΩ

22kΩ

47kΩ

—

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

47kΩ

2.2kΩ

22kΩ

0.1 to 0.3

■

UNR2111

UNR2112

UNR2113

UNR2114

UNR2115

UNR2116

UNR2117

UNR2118

UNR2119

UNR2110

UNR211D

UNR211E

UNR211F

UNR211H

UNR211L

UNR211M

UNR211N

UNR211T

UNR211V

UNR211Z

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51kΩ

1kΩ

47kΩ

4.7kΩ

2.2kΩ

4.7kΩ

2.2kΩ

4.7kΩ

22kΩ

2.2kΩ

4.7kΩ

0.4±0.2

1:Base

2:Emitter

EIAJ:SC-59

Mini Type Package

3:Collector

Internal Connection

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

–50

–100

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

200

T_j

150

T_stg

–55 to +150

˚C

Note) The part numbers in the parenthesis show conventional part number.

12 3 4 5 6 7...18

中文翻译

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与UNR2116Q相关器件

型号	品牌	获取价格	描述	数据表
UNR2116R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR2116S	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23
UNR2117	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR2117(UN2117)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR2117\|UN2117	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2117Q	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23
UNR2117R	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23
UNR2117S	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23
UNR2118	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR2118(UN2118)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ