Datasheet > UNR2117|UN2117

UNR2117|UN2117

更新时间： 2022-01-18 17:16:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	435K
描述
Composite Device - Transistors with built-in Resistor

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数据手册

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UNR2117|UN2117 数据手册

Transistors with built-in Resistor

UNR211x Series (UN211x Series)

Silicon PNP epitaxial planar type

Unit: mm

+0.10

–0.05

0.40

+0.10

For digital circuits

0.16

–0.06

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• Mini type package allowing easy automatic insertion through tape

(0.95) (0.95)

packing and magazine packing

1.9 ^0.1

+0.20

2.90

–0.05

■ Resistance by Part Number

10˚

Marking Symbol (R₁)

(R₂)



• UNR2110 (UN2110)

• UNR2111 (UN2111)

• UNR2112 (UN2112)

• UNR2113 (UN2113)

• UNR2114 (UN2114)

• UNR2115 (UN2115)

• UNR2116 (UN2116)

• UNR2117 (UN2117)

• UNR2118 (UN2118)

• UNR2119 (UN2119)

• UNR211D (UN211D)

• UNR211E (UN211E)

• UNR211F (UN211F)

• UNR211H (UN211H)

• UNR211L (UN211L)

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ



1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Internal Connection



5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

22 kΩ

R₁

R₂

• UNR211M (UN211M) EI

• UNR211N (UN211N)

• UNR211T (UN211T)

• UNR211V (UN211V)

• UNR211Z (UN211Z)

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

−100

°C

200

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00006CED

12 3 4 5 6 7...17

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