Datasheet > UNR211H(UN211H)

UNR211H(UN211H)

更新时间： 2024-09-12 23:39:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	282K
描述
Composite Device - Transistors with built-in Resistor

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UNR211H(UN211H) 数据手册

Transistors with built-in Resistor

UNR21XX Series (UN21XX Series)

Silicon PNP epitaxial planer transistor

Unit: mm

+0.10

–0.05

0.40

+0.10

For digital circuits

0.16

–0.06

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package, allowing downsizing of the equipment and

(0.95) (0.95)

automatic insertion through tape packing and magazine packing.

1.9±0.1

+0.20

2.90

–0.05

■ Resistance by Part Number

10˚

Marking Symbol (R₁)

(R₂)

• UNR2110 (UN2110)

• UNR2111 (UN2111)

• UNR2112 (UN2112)

• UNR2113 (UN2113)

• UNR2114 (UN2114)

• UNR2115 (UN2115)

• UNR2116 (UN2116)

• UNR2117 (UN2117)

• UNR2118 (UN2118)

• UNR2119 (UN2119)

• UNR211D (UN211D)

• UNR211E (UN211E)

• UNR211F (UN211F)

• UNR211H (UN211H)

• UNR211L (UN211L)

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Internal Connection

5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

22 kΩ

R₁

R₂

• UNR211M (UN211M) EI

• UNR211N (UN211N)

• UNR211T (UN211T)

• UNR211V (UN211V)

• UNR211Z (UN211Z)

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

−50

−100

°C

Total power dissipation

Junction temperature

Storage temperature

P_T

200

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2002

SJH00006BED

12 3 4 5 6 7...17

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与UNR211H(UN211H)相关器件

型号	品牌	获取价格	描述	数据表
UNR211H\|UN211H	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR211HS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G
UNR211L	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR211L(UN211L)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR211L\|UN211L	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR211LR	PANASONIC	获取价格	暂无描述
UNR211LS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G
UNR211M	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR211M(UN211M)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR211M\|UN211M	ETC	获取价格	Composite Device - Transistors with built-in Resistor