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UNR211D PDF预览

UNR211D

更新时间: 2024-01-19 15:47:57
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
17页 435K
描述
Silicon PNP epitaxial planar type

UNR211D 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO 0.21最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UNR211D 数据手册

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Transistors with built-in Resistor  
UNR211x Series (UN211x Series)  
Silicon PNP epitaxial planar type  
Unit: mm  
+0.10  
–0.05  
0.40  
+0.10  
For digital circuits  
0.16  
–0.06  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
1
2
Mini type package allowing easy automatic insertion through tape  
(0.95) (0.95)  
packing and magazine packing  
1.9 0.1  
+0.20  
2.90  
–0.05  
Resistance by Part Number  
10˚  
Marking Symbol (R1)  
(R2)  
UNR2110 (UN2110)  
UNR2111 (UN2111)  
UNR2112 (UN2112)  
UNR2113 (UN2113)  
UNR2114 (UN2114)  
UNR2115 (UN2115)  
UNR2116 (UN2116)  
UNR2117 (UN2117)  
UNR2118 (UN2118)  
UNR2119 (UN2119)  
UNR211D (UN211D)  
UNR211E (UN211E)  
UNR211F (UN211F)  
UNR211H (UN211H)  
UNR211L (UN211L)  
6L  
6A  
6B  
6C  
6D  
6E  
6F  
6H  
6I  
6K  
6M  
6N  
6O  
6P  
6Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-59  
Mini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR211M (UN211M) EI  
UNR211N (UN211N)  
UNR211T (UN211T)  
UNR211V (UN211V)  
UNR211Z (UN211Z)  
EW  
EY  
FC  
FE  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
200  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJH00006CED  
1

UNR211D 替代型号

型号 品牌 替代类型 描述 数据表
DTC144TUAT106 ROHM

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