UN2113TMG

更新时间： 2024-09-15 13:00:47

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
17页	237K
描述
暂无描述

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中文翻译

获取价格

数据手册

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UN2113TMG 数据手册

Transistors with built-in Resistor

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Silicon PNP epitaxial planer transistor

Unit: mm

2.8 ⁺^–0⁰^.^.³²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

For digital circuits

0.65±0.15

Features

■

●

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

Mini type package, allowing downsizing of the equipment and

automatic insertion through tape packing and magazine packing.

●

Resistance by Part Number

■

Marking Symbol (R₁)

(R₂)

10kΩ

22kΩ

47kΩ

—

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

47kΩ

2.2kΩ

22kΩ

●

UN2111

UN2112

UN2113

UN2114

UN2115

UN2116

UN2117

UN2118

UN2119

UN2110

UN211D

UN211E

UN211F

UN211H

UN211L

UN211M

UN211N

UN211T

UN211V

UN211Z

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51kΩ

1kΩ

47kΩ

4.7kΩ

2.2kΩ

4.7kΩ

2.2kΩ

4.7kΩ

22kΩ

2.2kΩ

4.7kΩ

0.1 to 0.3

0.4±0.2

1:Base

2:Emitter

EIAJ:SC-59

Mini Type Package

3:Collector

Internal Connection

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

–50

–100

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

200

T_j

150

T_stg

–55 to +150

˚C

12 3 4 5 6 7...17

中文翻译

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UN2114Q	PANASONIC	获取价格	暂无描述
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UN2115R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UN2115S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UN2115TMG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon