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UN2117Q PDF预览

UN2117Q

更新时间: 2024-09-15 23:39:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关光电二极管
页数 文件大小 规格书
18页 283K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23

UN2117Q 数据手册

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Transistors with built-in Resistor  
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/  
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z  
(UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/  
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z)  
Unit: mm  
Silicon PNP epitaxial planer transistor  
2.8 +00..32  
1.5 +00..0255  
0.65±0.15  
0.65±0.15  
For digital circuits  
1
2
Features  
3
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through tape packing and magazine packing.  
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
0.1 to 0.3  
UNR2111  
UNR2112  
UNR2113  
UNR2114  
UNR2115  
UNR2116  
UNR2117  
UNR2118  
UNR2119  
UNR2110  
UNR211D  
UNR211E  
UNR211F  
UNR211H  
UNR211L  
UNR211M  
UNR211N  
UNR211T  
UNR211V  
UNR211Z  
6A  
6B  
6C  
6D  
6E  
6F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
0.4±0.2  
1:Base  
2:Emitter  
EIAJ:SC-59  
Mini Type Package  
3:Collector  
6H  
6I  
Internal Connection  
6K  
6L  
6M  
6N  
6O  
6P  
6Q  
EI  
EW  
EY  
FC  
FE  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
200  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The part numbers in the parenthesis show conventional part number.  
1

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