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UN211DTMG

更新时间: 2024-11-06 13:15:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
17页 237K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

UN211DTMG 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.83
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UN211DTMG 数据手册

 浏览型号UN211DTMG的Datasheet PDF文件第2页浏览型号UN211DTMG的Datasheet PDF文件第3页浏览型号UN211DTMG的Datasheet PDF文件第4页浏览型号UN211DTMG的Datasheet PDF文件第5页浏览型号UN211DTMG的Datasheet PDF文件第6页浏览型号UN211DTMG的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/  
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z  
Silicon PNP epitaxial planer transistor  
Unit: mm  
2.8 +00..32  
1.5 +00..0255  
For digital circuits  
0.65±0.15  
0.65±0.15  
Features  
Costs can be reduced through downsizing of the equipment and  
1
2
reduction of the number of parts.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through tape packing and magazine packing.  
3
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
UN2111  
UN2112  
UN2113  
UN2114  
UN2115  
UN2116  
UN2117  
UN2118  
UN2119  
UN2110  
UN211D  
UN211E  
UN211F  
UN211H  
UN211L  
UN211M  
UN211N  
UN211T  
UN211V  
UN211Z  
6A  
6B  
6C  
6D  
6E  
6F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
0.1 to 0.3  
0.4±0.2  
1:Base  
2:Emitter  
EIAJ:SC-59  
Mini Type Package  
3:Collector  
6H  
6I  
Internal Connection  
6K  
6L  
6M  
6N  
6O  
6P  
6Q  
EI  
EW  
EY  
FC  
FE  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
200  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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