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UN2114 PDF预览

UN2114

更新时间: 2024-09-14 22:17:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
17页 237K
描述
Silicon PNP epitaxial planer transistor

UN2114 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.82其他特性:BUILT IN BIAS RESISTOR RATIO 4.76
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz

UN2114 数据手册

 浏览型号UN2114的Datasheet PDF文件第2页浏览型号UN2114的Datasheet PDF文件第3页浏览型号UN2114的Datasheet PDF文件第4页浏览型号UN2114的Datasheet PDF文件第5页浏览型号UN2114的Datasheet PDF文件第6页浏览型号UN2114的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/  
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z  
Silicon PNP epitaxial planer transistor  
Unit: mm  
2.8 +00..32  
1.5 +00..0255  
For digital circuits  
0.65±0.15  
0.65±0.15  
Features  
Costs can be reduced through downsizing of the equipment and  
1
2
reduction of the number of parts.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through tape packing and magazine packing.  
3
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
UN2111  
UN2112  
UN2113  
UN2114  
UN2115  
UN2116  
UN2117  
UN2118  
UN2119  
UN2110  
UN211D  
UN211E  
UN211F  
UN211H  
UN211L  
UN211M  
UN211N  
UN211T  
UN211V  
UN211Z  
6A  
6B  
6C  
6D  
6E  
6F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
0.1 to 0.3  
0.4±0.2  
1:Base  
2:Emitter  
EIAJ:SC-59  
Mini Type Package  
3:Collector  
6H  
6I  
Internal Connection  
6K  
6L  
6M  
6N  
6O  
6P  
6Q  
EI  
EW  
EY  
FC  
FE  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
200  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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