生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | DIGITAL, BUILT IN BIAS RESISTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 33 |
JESD-30 代码: | R-PDSO-G5 | 元件数量: | 2 |
端子数量: | 5 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UMG10N | ROHM |
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General purpose (dual digital transistors) | |
UMG10NTL | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
UMG10NTR | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, UMT5, S | |
UMG10TL | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
UMG11 | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
UMG11N | ROHM |
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Emitter common (dual digital transistors) | |
UMG11N | BL Galaxy Electrical |
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50V,100mA,NPN Bipolar Digital Transistor | |
UMG11NTL | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, | |
UMG11NTR | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SC-88A, | |
UMG11TL | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, |