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UL634H256SK55 PDF预览

UL634H256SK55

更新时间： 2024-09-19 23:39:15
品牌 Logo 应用领域
其他 - ETC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 156K
描述
NVRAM (EEPROM Based)

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中文翻译

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UL634H256SK55 数据手册

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UL634H256  
Low Voltage PowerStore 32K x 8 nvSRAM  
Features  
Description  
F High-performance CMOS non-  
The UL634H256 has two separate high performance and ease of use  
volatile static RAM 32768 x 8 bits modes of operation: SRAM mode of a fast SRAM with nonvolatile  
F 45 and 55 ns Access Times  
F 20 and 25 ns Output Enable  
Access Times  
F ICC = 8 mA at 200 ns Cycle Time  
F Automatic STORE to EEPROM  
on Power Down using external  
capacitor  
and nonvolatile mode. In SRAM data integrity.  
mode, the memory operates as an STORE cycles also may be initia-  
ordinary static RAM. In nonvolatile ted under user control via a soft-  
operation, data is transferred in ware sequence or via a single pin  
parallel from SRAM to EEPROM or (HSB).  
from EEPROM to SRAM. In this Once a STORE cycle is initiated,  
mode SRAM functions are disab- further input or output are disabled  
F Software initiated STORE  
F Automatic STORE Timing  
F 105 STORE cycles to EEPROM  
F 10 years data retention in  
EEPROM  
led.  
until the cycle is completed.  
The UL634H256 is a fast static Because a sequence of addresses  
RAM (45 and 55 ns), with a nonvo- is used for STORE initiation, it is  
latile electrically erasable PROM important that no other read or  
(EEPROM) element incorporated write accesses intervene in the  
F Automatic RECALL on Power Up in each static memory cell. The sequence or the sequence will be  
F Software RECALL Initiation  
F Unlimited RECALL cycles from  
EEPROM  
SRAM can be read and written an aborted.  
unlimited number of times, while RECALL cycles may also be initia-  
independent nonvolatile data resi- ted by a software sequence.  
F Wide voltage range: 2.7 ... 3.6 V  
F Operating temperature ranges:  
0 to 70 °C  
des in EEPROM.  
Internally, RECALL is a two step  
Data transfers from the SRAM to procedure. First, the SRAM data is  
the EEPROM (the STORE opera- cleared and second, the nonvola-  
tion) take place automatically upon tile information is transferred into  
power down using charge stored in the SRAM cells.  
an external 100 mF capacitor. The RECALL operation in no way  
Transfers from the EEPROM to the alters the data in the EEPROM  
SRAM (the RECALL operation) cells. The nonvolatile data can be  
take place automatically on power recalled an unlimited number of  
-40 to 85 °C  
F CECC 90000 Quality Standard  
F ESD protection > 2000 V  
(MIL STD 883C M3015.7-HBM)  
F Packages: SOP32 (300 mil)  
TSOP32 (Type I)  
up.  
times.  
The UL634H256 combines the  
Pin Description  
Pin Configuration  
Signal Name Signal Description  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
32  
31  
30  
VCAP  
A14  
A12  
A7  
VCCX  
HSB  
W
1
n.c.  
A10  
E
G
A11  
A9  
2
2
A0 - A14  
Address Inputs  
Data In/Out  
3
3
4
DQ0 - DQ7  
29 DQ7  
A13  
A8  
4
A8  
5
DQ6  
DQ5  
DQ4  
DQ3  
VSS  
DQ2  
DQ1  
DQ0  
A0  
A6  
5
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A13  
W
Chip Enable  
6
A5  
A9  
A11  
G
6
E
7
A4  
HSB  
VCCX  
VCAP  
A14  
A12  
A7  
7
Output Enable  
Write Enable  
8
A3  
8
G
SOP  
TSOP  
9
n.c.  
A2  
n.c.  
A10  
E
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
9
10  
11  
12  
13  
14  
15  
16  
10  
11  
12  
13  
14  
15  
16  
W
A1  
A0  
VCCX  
VSS  
VCAP  
Power Supply Voltage  
Ground  
A6  
DQ0  
DQ1  
DQ2  
VSS  
A1  
A5  
A2  
A4  
Capacitor  
n.c.  
A3  
Top View  
Top View  
Hardware Controlled Store/Busy  
HSB  
1
January 09, 2002  
1234567...14

中文翻译

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与UL634H256SK55相关器件

型号 品牌 获取价格 描述 数据表
UL634H256SK55G1 SIMTEK

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 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO32, 0.300 INCH, SOP-32
UL634H256TC35 SIMTEK

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 		Memory IC,
UL634H256TC45 SIMTEK

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 		Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO32, TSOP1-32
UL634H256TK45 SIMTEK

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 		Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO32, TSOP1-32
UL635H256 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256BSC55 CYPRESS

获取价格

 		32KX8 NON-VOLATILE SRAM, 55ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BSC55G1 CYPRESS

获取价格

 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP-28
UL635H256BSK45 CYPRESS

获取价格

 		32KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BSK45G1 CYPRESS

获取价格

 		32KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BSK55 CYPRESS

获取价格

 		32KX8 NON-VOLATILE SRAM, 55ns, PDSO28, 0.330 INCH, SOP-28

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