Datasheet > UL634H256TC45

UL634H256TC45

更新时间： 2024-11-11 10:49:35

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
14页	247K
描述
Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO32, TSOP1-32

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UL634H256TC45 数据手册

UL634H256

Low Voltage PowerStore 32K x 8 nvSRAM

Features

Description

The UL634H256 has two separate The UL634H256 combines the

! High-performance CMOS non-

volatile static RAM 32768 x 8 bits modes of operation: SRAM mode high performance and ease of use

! 35 and 45 ns Access Times

! 15 and 20 ns Output Enable

Access Times

and nonvolatile mode. In SRAM of a fast SRAM with nonvolatile

mode, the memory operates as an data integrity.

ordinary static RAM. In nonvolatile STORE cycles also may be initia-

operation, data is transferred in ted under user control via a soft-

parallel from SRAM to EEPROM or ware sequence or via a single pin

from EEPROM to SRAM. In this (HSB).

! I_CC= 8 mA at 200 ns Cycle Time

! Automatic STORE to EEPROM

on Power Down using external

capacitor

mode SRAM functions are disab- Once a STORE cycle is initiated,

! Software initiated STORE

! Automatic STORE Timing

! 10⁵STORE cycles to EEPROM

! 10 years data retention in

EEPROM

led.

further input or output are disabled

The UL634H256 is a fast static until the cycle is completed.

RAM (35 and 45 ns), with a nonvo- Because a sequence of addresses

latile electrically erasable PROM is used for STORE initiation, it is

(EEPROM) element incorporated important that no other read or

! Automatic RECALL on Power Up in each static memory cell. The write accesses intervene in the

! Software RECALL Initiation

! Unlimited RECALL cycles from

EEPROM

SRAM can be read and written an sequence or the sequence will be

unlimited number of times, while aborted.

independent nonvolatile data resi- RECALL cycles may also be initia-

! Wide voltage range: 2.7 ... 3.6 V

(3.0 ... 3.6 V for 35 ns type)

! Operating temperature range:

0 to 70 °C

des in EEPROM.

ted by a software sequence.

Data transfers from the SRAM to Internally, RECALL is a two step

the EEPROM (the STORE opera- procedure. First, the SRAM data is

tion) take place automatically upon cleared and second, the nonvola-

power down using charge stored in tile information is transferred into

an external 68 µF capacitor. Trans- the SRAM cells.

-40 to 85 °C (only 45 ns)

-40 to 125 °C (only 45 ns)

! QS 9000 Quality Standard

! ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

! Packages: SOP32 (300 mil)

TSOP32 (Type I)

fers from the EEPROM to the The RECALL operation in no way

SRAM (the RECALL operation) alters the data in the EEPROM

take place automatically on power cells. The nonvolatile data can be

up.

recalled an unlimited number of

times.

Pin Description

Pin Configuration

Signal Name Signal Description

VCAP

A14

A12

VCCX

HSB

n.c.

A10

A11

A0 - A14

DQ0 - DQ7

Address Inputs

Data In/Out

29 DQ7

A13

DQ6

DQ5

DQ4

DQ3

VSS

DQ2

DQ1

DQ0

A13

Chip Enable

A11

HSB

VCCX

VCAP

A14

A12

Output Enable

Write Enable

SOP

TSOP

n.c.

A10

VCCX

VSS

VCAP

Power Supply Voltage

Ground

Capacitor

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

n.c.

Top View

Hardware Controlled Store/Busy

HSB

October 20, 2003

12 3 4 5 6 7...14

中文翻译

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与UL634H256TC45相关器件

型号	品牌	获取价格	描述	数据表
UL634H256TK45	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO32, TSOP1-32
UL635H256	SIMTEK	获取价格	Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256BSC55	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 55ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BSC55G1	CYPRESS	获取价格	Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP-28
UL635H256BSK45	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BSK45G1	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BSK55	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 55ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BSK55G1	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 55ns, PDSO28, 0.330 INCH, SOP-28
UL635H256BTC45	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDSO32, TSOP1-32
UL635H256BTC55	CYPRESS	获取价格	Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO32, TSOP1-32

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