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UL635H256SC45 PDF预览

UL635H256SC45

更新时间： 2024-11-10 03:23:39
品牌 Logo 应用领域
SIMTEK 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
14页 188K
描述
Low Voltage PowerStore 32K x 8 nvSRAM

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中文翻译

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UL635H256SC45 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SOP,Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.41
风险等级：5.82Is Samacsys：N
最长访问时间：45 nsJESD-30 代码：R-PDSO-G28
JESD-609代码：e0内存密度：262144 bit
内存集成电路类型：NON-VOLATILE SRAM内存宽度：8
功能数量：1端子数量：28
字数：32768 words字数代码：32000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：32KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：PARALLEL认证状态：Not Qualified
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn85Pb15)端子形式：GULL WING
端子位置：DUALBase Number Matches：1

UL635H256SC45 数据手册

 浏览型号UL635H256SC45的Datasheet PDF文件第2页浏览型号UL635H256SC45的Datasheet PDF文件第3页浏览型号UL635H256SC45的Datasheet PDF文件第4页浏览型号UL635H256SC45的Datasheet PDF文件第5页浏览型号UL635H256SC45的Datasheet PDF文件第6页浏览型号UL635H256SC45的Datasheet PDF文件第7页 
Obsolete - Not Recommended for New Designs  
UL635H256  
Low Voltage PowerStore 32K x 8 nvSRAM  
Features  
Description  
• High-performance CMOS non-  
The UL635H256 has two separate The UL635H256 combines the  
volatile static RAM 32768 x 8 bits modes of operation: SRAM mode high performance and ease of use  
• 35 and 45 ns Access Times  
• 15 and 20 ns Output Enable  
Access Times  
and nonvolatile mode. In SRAM of a fast SRAM with nonvolatile  
mode, the memory operates as an data integrity.  
ordinary static RAM. In nonvolatile STORE cycles also may be initia-  
operation, data is transferred in ted under user control via a soft-  
parallel from SRAM to EEPROM or ware sequence.  
• ICC = 8 mA typ. at 200 ns Cycle  
Time  
• Automatic STORE to EEPROM  
on Power Down using system  
capacitance  
from EEPROM to SRAM. In this Once a STORE cycle is initiated,  
mode SRAM functions are disab- further input or output are disabled  
led.  
until the cycle is completed.  
• Software initiated STORE  
• Automatic STORE Timing  
• 106 STORE cycles to EEPROM  
• 100 years data retention in  
EEPROM  
The UL635H256 is a fast static Because a sequence of addresses  
RAM (35 and 45 ns), with a nonvo- is used for STORE initiation, it is  
latile electrically erasable PROM important that no other read or  
(EEPROM) element incorporated write accesses intervene in the  
in each static memory cell. The sequence or the sequence will be  
• Automatic RECALL on Power Up SRAM can be read and written an  
aborted.  
• Software RECALL Initiation  
• Unlimited RECALL cycles from  
EEPROM  
unlimited number of times, while  
independent nonvolatile data resi-  
des in EEPROM. Data transfers  
from the SRAM to the EEPROM  
(the STORE operation) take place  
automatically upon power down  
using charge stored in system  
capacitance. Transfers from the  
EEPROM to the SRAM (the  
RECALL operation) take place  
automatically on powerup.  
RECALL cycles may also be initia-  
ted by a software sequence.  
Internally, RECALL is a two step  
procedure. First, the SRAM data is  
cleared and second, the nonvola-  
tile information is transferred into  
the SRAM cells.  
The RECALL operation in no way  
alters the data in the EEPROM  
cells. The nonvolatile data can be  
recalled an unlimited number of  
times.  
• Wide voltage range: 2.7 ... 3.6 V  
(3.0 ... 3.6 V for 35 ns type)  
• Operating temperature range:  
0 to 70 °C  
-40 to 85 °C  
• QS 9000 Quality Standard  
• ESD protection > 2000 V  
(MIL STD 883C M3015.7-HBM)  
• RoHS compliance and Pb- free  
• Package:SOP28 (330 mil)  
Pin Description  
Pin Configuration  
G
A11  
A9  
A8  
A13  
W
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
n.c.  
A10  
E
VCC  
W
A13  
A8  
A9  
A11  
G
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
1
2
3
4
5
6
7
8
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
2
Signal Name Signal Description  
3
4
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
VSS  
DQ2  
DQ1  
DQ0  
A0  
A0 - A14  
Address Inputs  
Data In/Out  
5
6
DQ0 - DQ7  
n. c.  
VCC  
n. c.  
A14  
A12  
A7  
7
8
SOP  
TSOP  
Chip Enable  
E
A10  
E
9
10  
11  
12  
13  
14  
15  
16  
9
Output Enable  
Write Enable  
Power Supply Voltage  
Ground  
G
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A0  
10  
11  
12  
13  
14  
DQ0  
DQ1  
DQ2  
VSS  
W
A6  
A5  
A1  
VCC  
VSS  
A4  
A2  
A3  
n.c.  
Top View  
Top View  
March 31, 2006  
STK Control #ML0059  
1
Rev 1.0  
1234567...14

中文翻译

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与UL635H256SC45相关器件

型号 品牌 获取价格 描述 数据表
UL635H256SC45G1 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SC55 ETC

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 		NVRAM (EEPROM Based)
UL635H256SC55G1 SIMTEK

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 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP1-28
UL635H256SK35 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK35G1 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK45 SIMTEK

获取价格

 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK45G1 SIMTEK

获取价格

 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK55 ETC

获取价格

 		NVRAM (EEPROM Based)
UL635H256SK55G1 SIMTEK

获取价格

 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP1-28
UL635H256TC45G1 CYPRESS

获取价格

 		Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO32, TSOP1-32

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