Datasheet > UL631H256SC55

UL631H256SC55

更新时间： 2024-09-24 23:39:15

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	127K
描述
NVRAM (EEPROM Based)

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中文翻译

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UL631H256SC55 数据手册

UL631H256

Low Voltage SoftStore 32K x 8 nvSRAM

Features

Description

F High-performance CMOS non-

The UL631H256 has two separate of a fast SRAM with nonvolatile

volatile static RAM 32768 x 8 bits modes of operation: SRAM mode data integrity.

F 45 and 55 ns Access Times

F 20 and 25 ns Output Enable

Access Times

F Software STORE Initiation

F Automatic STORE Timing

F 10⁵STORE cycles to EEPROM

F 10 years data retention in

EEPROM

and nonvolatile mode. In SRAM Once a STORE cycle is initiated,

mode, the memory operates as an further input or output are disabled

ordinary static RAM. In nonvolatile until the cycle is completed.

operation, data is transferred in Because a sequence of addresses

parallel from SRAM to EEPROM or is used for STORE initiation, it is

from EEPROM to SRAM. In this important that no other read or

mode SRAM functions are disab- write accesses intervene in the

led.

sequence or the sequence will be

F Automatic RECALL on Power Up The UL631H256 is a fast static aborted.

F Software RECALL Initiation

F Unlimited RECALL cycles from

EEPROM

F Unlimited Read and Write to

SRAM

RAM (45 and 55 ns), with a nonvo- Internally, RECALL is a two step

latile electrically erasable PROM procedure. First, the SRAM data is

(EEPROM) element incorporated cleared and second, the nonvola-

in each static memory cell. The tile information is transferred into

SRAM can be read and written an the SRAM cells.

F Wide voltage range: 2.7 ... 3.6 V

F Operating temperature range:

0 to 70 °C

unlimited number of times, while The RECALL operation in no way

independent nonvolatile data resi- alters the data in the EEPROM

des in EEPROM. Data transfers cells. The nonvolatile data can be

-40 to 85 °C

from the SRAM to the EEPROM

recalled an unlimited number of

F CECC 90000 Quality Standard

F ESD protectio > 2000 V

(MIL STD 883C M3015.7-HBM)

F Packages:SOP28 (330 mil)

TSOP32 (Type I)

(the STORE operation), or from the times.

EEPROM to the SRAM (the The UL631H256 is pin compatible

RECALL operation) are initiated with standard SRAMs.

through software sequences.

The UL631H256 combines the

high performance and ease of use

Pin Configuration

Pin Description

A11

n.c.

A10

VCC

A13

A11

Signal Name Signal Description

A14

A12

A0 - A14

Address Inputs

Data In/Out

DQ7

DQ6

DQ5

DQ4

DQ3

VSS

DQ2

DQ1

DQ0

A13

n. c.

VCC

n. c.

A14

DQ0 - DQ7

Chip Enable

TSOP

SOP

A10

Output Enable

Write Enable

Power Supply Voltage

Ground

A12 11

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

VCC

VSS

n.c.

Top View

November 01, 2001

12 3 4 5 6 7...12

中文翻译

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与UL631H256SC55相关器件

型号	品牌	获取价格	描述	数据表
UL631H256SC55G1	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP1-28
UL631H256SK35	SIMTEK	获取价格	SimtekLow Voltage SoftStore 32K x 8 nvSRAM
UL631H256SK35G1	SIMTEK	获取价格	SimtekLow Voltage SoftStore 32K x 8 nvSRAM
UL631H256SK45	SIMTEK	获取价格	SimtekLow Voltage SoftStore 32K x 8 nvSRAM
UL631H256SK45G1	SIMTEK	获取价格	SimtekLow Voltage SoftStore 32K x 8 nvSRAM
UL631H256SK55	ETC	获取价格	NVRAM (EEPROM Based)
UL631H256SK55G1	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP1-28
UL634H256	SIMTEK	获取价格	Low Voltage PowerStore 32K x 8 nvSRAM
UL634H256SA35G1	SIMTEK	获取价格	Low Voltage PowerStore 32K x 8 nvSRAM
UL634H256SA45G1	SIMTEK	获取价格	Low Voltage PowerStore 32K x 8 nvSRAM

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