Datasheet > UL634H256SC45G1

UL634H256SC45G1

更新时间： 2024-09-20 03:23:39

品牌	Logo	应用领域
SIMTEK		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
15页	352K
描述
Low Voltage PowerStore 32K x 8 nvSRAM

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中文翻译

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替代型号

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UL634H256SC45G1 数据手册

UL634H256

Low Voltage PowerStore 32K x 8 nvSRAM

Not Recommended For New Designs

Features

Description

High-performance CMOS non-

The UL634H256 has two separate The UL634H256 combines the

volatile static RAM 32768 x 8 bits modes of operation: SRAM mode high performance and ease of use

35 and 45 ns Access Times

15 and 20 ns Output Enable

Access Times

and nonvolatile mode. In SRAM of a fast SRAM with nonvolatile

mode, the memory operates as an data integrity.

ordinary static RAM. In nonvolatile STORE cycles also may be initia-

operation, data is transferred in ted under user control via a soft-

parallel from SRAM to EEPROM or ware sequence or via a single pin

from EEPROM to SRAM. In this (HSB).

_CC= 8 mA typ. at 200 ns Cycle

Time

Automatic STORE to EEPROM

on Power Down using external

capacitor

mode SRAM functions are disab- Once a STORE cycle is initiated,

led.

further input or output are disabled

Software initiated STORE

Automatic STORE Timing

10⁶STORE cycles to EEPROM

100 years data retention in

EEPROM

The UL634H256 is a fast static until the cycle is completed.

RAM (35 and 45 ns), with a nonvo- Because a sequence of addresses

latile electrically erasable PROM is used for STORE initiation, it is

(EEPROM) element incorporated important that no other read or

in each static memory cell. The write accesses intervene in the

Automatic RECALL on Power Up SRAM can be read and written an

sequence or the sequence will be

aborted.

Software RECALL Initiation

Unlimited RECALL cycles from

EEPROM

unlimited number of times, while

independent nonvolatile data resi-

des in EEPROM.

RECALL cycles may also be initia-

ted by a software sequence.

Internally, RECALL is a two step

procedure. First, the SRAM data is

cleared and second, the nonvola-

tile information is transferred into

the SRAM cells.

The RECALL operation in no way

alters the data in the EEPROM

cells. The nonvolatile data can be

recalled an unlimited number of

times.

Wide voltage range: 2.7 ... 3.6 V

(3.0 ... 3.6 V for 35 ns type)

Operating temperature range:

0 to 70 °C

Data transfers from the SRAM to

the EEPROM (the STORE opera-

tion) take place automatically upon

power down using charge stored in

an external 68 μF capacitor. Trans-

fers from the EEPROM to the

SRAM (the RECALL operation)

take place automatically on power

up.

-40 to 85 °C

-40 to 125 °C

QS 9000 Quality Standard

ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

RoHS compliance and Pb- free

Package:SOP32 (300 mil)

Pin Description

Pin Configuration

Signal Name Signal Description

VCAP

A14

A12

VCCX

HSB

A13

A11

n.c.

A10

DQ7

DQ6

DQ5

DQ4

DQ3

A0 - A14

Address Inputs

Data In/Out

DQ0 - DQ7

Chip Enable

Output Enable

Write Enable

SOP

n.c.

VCCX

VSS

VCAP

Power Supply Voltage

Ground

DQ0

DQ1

DQ2

VSS

Capacitor

Top View

Hardware Controlled Store/Busy

HSB

August 15, 2006

STK Control #ML0058

Rev 1.1

12 3 4 5 6 7...15

中文翻译

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UL634H256SC45G1 替代型号

型号	品牌	替代类型	描述	数据表
STK14C88-3N45I	CYPRESS	功能相似	32KX8 NON-VOLATILE SRAM, 45ns, PDSO32, 0.300 INCH, PLASTIC, SOIC-32
STK14C88-3NF45I	SIMTEK	功能相似	32Kx8 AutoStore nvSRAM
STK14C88-3NF45	SIMTEK	功能相似	32Kx8 AutoStore nvSRAM

与UL634H256SC45G1相关器件

型号	品牌	获取价格	描述	数据表
UL634H256SC55	ETC	获取价格	NVRAM (EEPROM Based)
UL634H256SC55G1	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO32, 0.300 INCH, SOP-32
UL634H256SK35	ETC	获取价格	LOW VOLTAGE POWERSTORE 32K X 8 NVSRAM
UL634H256SK35G1	SIMTEK	获取价格	Low Voltage PowerStore 32K x 8 nvSRAM
UL634H256SK45	ETC	获取价格	LOW VOLTAGE POWERSTORE 32K X 8 NVSRAM
UL634H256SK45G1	SIMTEK	获取价格	Low Voltage PowerStore 32K x 8 nvSRAM
UL634H256SK55	ETC	获取价格	NVRAM (EEPROM Based)
UL634H256SK55G1	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO32, 0.300 INCH, SOP-32
UL634H256TC35	SIMTEK	获取价格	Memory IC,
UL634H256TC45	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO32, TSOP1-32

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