TTA0001(Q)

更新时间： 2024-10-26 13:15:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
5页	161K
描述
TRANSISTOR,BJT,PNP,160V V(BR)CEO,18A I(C),TO-247VAR

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中文翻译

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技术参数
数据手册

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TTA0001(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.6	最大集电极电流 (IC)：	18 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	150 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

TTA0001(Q) 数据手册

TTA0001

TOSHIBA Transistor Silicon PNP Triple Diffused Type

TTA0001

○Power Amplifier Applications

Unit: mm

•

High collector voltage: V

= －160 V (min.)

CEO

Complementary to TTC0001

Recommended for 100-W high-fidelity audio frequency amplifier output

stage.

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

-160

-5

Collector-emitter voltage

Emitter-base voltage

1.BASE

2.COLLECTOR(HEAT SINK)

3.EMITTER

-18

Collector current

Pulse

-35

JEDEC

―

Base current

-9

JEITA

Collector power dissipation

Junction temperature

Storage temperature range

150

°C

150

TOSHIBA

2-16C1A

stg

−55 to 150

Weight : 4.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-06-11

12 3 4 5

中文翻译

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