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TTA0002(Q) PDF预览

TTA0002(Q)

更新时间: 2024-10-26 13:15:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
5页 188K
描述
Trans GP BJT PNP 160V 18A 3-Pin(3+Tab) TO-3PL

TTA0002(Q) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:16 weeks
风险等级:2.11Base Number Matches:1

TTA0002(Q) 数据手册

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TTA0002  
TOSHIBA Transistor Silicon PNP Triple Diffused Type  
TTA0002  
Power Amplifier Applications  
Unit: mm  
High collector voltage: V  
= 160 V (min)  
CEO  
Complementary to TTC0002  
Recommended for 100-W high-fidelity audio frequency amplifier output  
stage.  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
-160  
-160  
-5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
V
DC  
I
-18  
A
C
Collector current  
Pulse  
I
-35  
A
CP  
JEDEC  
JEITA  
Base current  
I
-9  
A
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
180  
W
°C  
°C  
C
TOSHIBA  
2-21F1A  
T
150  
j
T
stg  
55 to 150  
Weight: 9.75 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2009-06-11  

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