Datasheet > TTA006B

TTA006B

更新时间： 2024-09-16 14:56:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	313K
描述
PNP Bipolar Transistor, -230 V, -1 A, TO-126N

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TTA006B 数据手册

TTA006B

Bipolar Transistors Silicon PNP Epitaxial Type

TTA006B

1. Applications

•

Power Amplifiers

•

Audio-Frequency Amplifiers

2. Features

(1) High collector voltage

: VCEO = -230 V (min)

(2) Small collector output capacitance : Cob = 30 pF (typ.)

(3) High transition frequency

(4) Complementary to TTC011B

: fT = 70 MHz (typ.)

3. Packaging and Internal Circuit (Note)

1. Emitter

2. Collector

3. Base

TO-126N

Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation

voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical

isolation from surrounding parts.

4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

VCBO

VCEO

VEBO

-230

-5

(Note 1)

-1

ICP

-2

-0.5

1.5

Collector power dissipation

Junction temperature

Storage temperature

(Tc = 25 �)

150

-55 to 150

�

Tstg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 150 �.

Start of commercial production

2014-04

Toshiba Electronic Devices & Storage Corporation

2023-06-06

Rev.2.0

12 3 4 5 6

中文翻译

下载PDF

与TTA006B相关器件

型号	品牌	获取价格	描述	数据表
TTA007	TOSHIBA	获取价格	Silicon PNP Epitaxial Type
TTA007(TE85L)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,1A I(C),SOT-23VAR
TTA007(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,1A I(C),SOT-23VAR
TTA008B	TOSHIBA	获取价格	PNP Bipolar Transistor, -80 V, -2 A, TO-126N
TTA009	TOSHIBA	获取价格	PNP Bipolar Transistor, -80 V, -3 A, New PW-Mold
TTA010	TOSHIBA	获取价格	PNP Bipolar Transistor, -500 V, -0.1 A, PW-Mini
TTA011	TOSHIBA	获取价格	PNP Bipolar Transistor, -50 V, -5 A, PW-Mini
TTA012	TOSHIBA	获取价格	PNP Bipolar Transistor, -80 V, -4 A, PW-Mini
TTA013	TOSHIBA	获取价格	PNP Bipolar Transistor, -120 V, -2.5 A, PW-Mini
TTA014	TOSHIBA	获取价格	PNP Bipolar Transistor, -120 V, -2.5 A, New PW-Mold