Datasheet > TSF10H100C_14

TSF10H100C_14

更新时间： 2024-11-10 01:08:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	247K
描述
Trench Schottky Rectifier

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中文翻译

获取价格

数据手册

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TSF10H100C_14 数据手册

TSF10H100C thru TSF10H200C

Taiwan Semiconductor

Trench Schottky Rectifier

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Low power loss/ high efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

ITO-220AB

- Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high frequency

miniature switched mode power supplies such as adapters,

lighting and on-board DC/DC converters.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 0.56 Nm max.

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

TSF10H

100C

100

TSF10H

120C

120

TSF10H

150C

150

TSF10H

200C

200

PARAMETER

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

per device

per diode

Maximum average forward

rectified current

I_F(AV)

Peak forward surge current, 8.3ms single half

sine-wave superimposed on rated load per diode

I_FSM

100

Voltage rate of change (Rated V_R)

10000

dV/dt

V/μs

TYP

MAX

0.70

0.63

100

TYP

MAX

TYP

MAX

0.88

0.72

100

TYP

MAX

0.91

0.75

100

I_F= 5A

T_J= 25°C

0.62

0.66

0.74

0.66

100

0.78

0.64

0.81

0.67

Instantaneous forward

voltage per diode (Note1)

V_F

I_R

T_J= 125°C

T_J= 25°C

T_J= 125°C

0.55

0.58

μA

°C/W

°C

Instantaneous reverse current per

diode at rated reverse voltage

1.5

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

R_θJC

T_J

- 55 to +150

T_STG

°C

Note 1: Pulse test with pulse width=300μs, 1% duty cycle

Document Number: DS_D1411070

Version: H14

12 3 4 5

中文翻译

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