Datasheet > TSF10N60M

TSF10N60M

更新时间： 2024-11-09 07:07:59

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
7页	295K
描述
600V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TSF10N60M 数据手册

TSP10N60M / TSF10N60M

600V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

advanced planar stripe DMOS technology.

•

10.0A, 600V, R_DS(on)= 0.750Ω @V_GS= 10 V

Low gate charge ( typical 48nC)

High ruggedness

Fast switching

100% avalanche tested

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Improved dv/dt capability

_{D

●

◀

▲

●

{

TO-220F

TO-220

G D

D S

^{S

Absolute Maximum Ratings

T = 25°Cunless otherwise noted

Symbol

V_DSS

Parameter

TSP10N60M

TSF10N60M

Units

Drain-Source Voltage

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

10.0

6.0

10.0*

6.0*

I_DM

(Note 1)

Drain Current

40 *

V_GSS

E_AS

E_AR

Gate-Source Voltage

± 30

709

16.2

4.5

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

V/ns

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

dv/dt

P_D

162

- Derate above 25°C

Operating and Storage Temperature Range

1.30

0.42

W/°C

°C

T_J, T_STG

T_L

-55 to +150

300

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

TSP10N60M

TSF10N60M

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.77

0.5

2.4

R_θCS

R_θJA

62.5

代理销售：深圳德江源电子有限公司 0755-82966416 15989331311

12 3 4 5 6 7

中文翻译

下载PDF

与TSF10N60M相关器件

型号	品牌	获取价格	描述	数据表
TSF10N65M	TRUESEMI	获取价格	TO-220F
TSF10N80M	TRUESEMI	获取价格	TO-220F
TSF10U60C	TSC	获取价格	Trench MOS Barrier Schottky Rectifier
TSF11	ADAM-TECH	获取价格	Modular Terminal Block, 10A, 1 Deck(s)
TSF11	TAITRON	获取价格	1.0A Super Fast Recovery Rectifier
TSF-110-01-D-D	SAMTEC	获取价格	Board Connector, 20 Contact(s), 2 Row(s), Male, Straight, Solder Terminal,
TSF-110-01-S-S	SAMTEC	获取价格	Board Connector, 10 Contact(s), 1 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT
TSF110D00A-S4	TOKEN	获取价格	SAW 声表术语与应用 - RF 滤波器 / IF 滤波器无线通信技术
TSF110D00B-S1	TOKEN	获取价格	SAW 声表术语与应用 - RF 滤波器 / IF 滤波器无线通信技术
TSF110D00C-S1	TOKEN	获取价格	SAW 声表术语与应用 - RF 滤波器 / IF 滤波器无线通信技术