Datasheet > TSF10U60C

TSF10U60C

更新时间： 2024-09-23 12:19:11

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TSC		/
页数	文件大小	规格书
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描述
Trench MOS Barrier Schottky Rectifier

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中文翻译

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TSF10U60C 数据手册

TSF10U60C

Taiwan Semiconductor

Trench MOS Barrier Schottky Rectifier

FEATURES

- Patented Trench MOS Barrier Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Lower power loss/ High efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

ITO-220AB

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Mounting torque: 5 in-lbs. max.

Weight: 1.7g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)

PARAMETER

TSF10U60C

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified

current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

150

Voltage rate of change (rated VR)

10000

dV/dt

V_AC

V/μs

Isolation voltage from terminal to heatsink t = 1 min

2000

Min.

TYP.

MAX.

V_BR

V_F

I_R

Breakdown voltage ( IR =1.0mA, Ta =25°C )

0.44

0.48

0.62

0.42

500

100

IF = 5A

Tj = 25°C

Maximum instantaneous forward voltage

per diode (Note1)

0.54

IF = 10A

IF = 5A

0.39

Tj = 125°C

Tj = 25°C

Tj = 125°C

μA

^OC/W

^OC

Maximum instantaneous reverse current per diode at

rated reverse voltage

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

R_θjC

T_J

- 55 to +150

^OC

T_STG

Note 1: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle

Document Number: DS_D1401023

Version: B14

12 3

中文翻译

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