Datasheet > TSF10N80M

TSF10N80M

更新时间： 2024-09-24 17:15:43

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信安 - TRUESEMI		/
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7页	692K
描述
TO-220F

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TSF10N80M 数据手册

TSF10N80M

800V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

• 10.0A,800V,Max.R_DS(on)=1.10 Ω @ V_GS=10V

• Low gate charge(typical 45nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

• Improved dv/dt capability

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Value

800

Symbol

V_DSS

Parameter

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 30

10.0

6.0

T_C= 25℃

T_C= 100℃

(Note 1)

(Note 2)

(Note 1)

(Note 3)

I_D

Drain Current

I_DM

E_AS

Pulsed Drain Current

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

920

V/ns

E_AR

dv/dt

4.0

240

Power Dissipation (T_C= 25℃)

-Derate above 25℃

P_D

T_J, T_STG

T_L

1.92

-55 to +150

W/℃

℃

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

* Drain current limited by maximum junction temperature.

Thermal Resistance Characteristics

Typ.

Max.

0.52

Symbol

Parameter

Units

℃/W

R_θJC

Thermal Resistance,Junction-to-Case

Thermal Resistance,Case-to-Sink Typ.

0.24

R_θCS

R_θJA

Thermal Resistance,Junction-to-Ambient

Ver.B1

www.truesemi.com

12 3 4 5 6 7

中文翻译

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