TSF10L100CW - TSF10L200CW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
- Halogen-free according to IEC 61249-2-21
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier is designed for high frequency
switched mode power supplies such as adapters, lighting, and
DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSF10L
100CW
100
TSF10L
150CW
150
TSF10L
200CW
200
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
10
Maximum average forward
rectified current
IF(AV)
5
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
IFSM
100
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
TYP
MAX
0.80
1.00
0.71
0.81
100
10
TYP
MAX
0.88
0.96
0.74
0.83
50
TYP
MAX
0.90
0.98
0.78
0.86
50
IF = 5A
0.71
0.91
0.62
0.72
-
0.81
0.89
0.67
0.76
-
0.84
0.92
0.72
0.80
-
TJ = 25°C
IF = 10A
IF = 5A
Instantaneous forward
voltage per diode (Note1)
VF
V
TJ = 125°C
IF = 10A
TJ = 25°C
μA
mA
°C/W
°C
Instantaneous reverse current per
diode at rated reverse voltage
IR
TJ = 125°C
-
-
5
-
5
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
6.5
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D0000084
Version: A15