TSF10H45C thru TSF10H60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
VRRM
TSF10H45C
TSF10H60C
UNIT
Maximum repetitive peak reverse voltage
45
60
V
A
per device
per diode
10
5
Maximum average forward rectified
current
IF(AV)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
100
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
Min.
Typ. Max.
Min.
Typ. Max.
IF = 2.5A
-
-
-
-
-
-
0.44
0.48
0.33
0.40
-
-
-
-
-
-
-
-
0.46
0.54
0.38
0.48
-
-
TJ = 25°C
IF = 5A
IF = 2.5A
IF = 5A
0.58
-
0.62
-
Instantaneous forward voltage per diode
( Note1 )
VF
V
TJ = 125°C
0.50
500
15
0.56
500
25
TJ = 25°C
μA
Instantaneous reverse current per diode at rated
reverse voltage
IR
TJ = 125°C
5
6
mA
OC/W
OC
OC
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
5.5
- 55 to +150
- 55 to +150
TSTG
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
Document Number: DS_D1411056
Version: E14