5秒后页面跳转
TSF10H45C PDF预览

TSF10H45C

更新时间: 2024-09-24 01:19:39
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
5页 215K
描述
Trench Schottky Rectifier

TSF10H45C 数据手册

 浏览型号TSF10H45C的Datasheet PDF文件第2页浏览型号TSF10H45C的Datasheet PDF文件第3页浏览型号TSF10H45C的Datasheet PDF文件第4页浏览型号TSF10H45C的Datasheet PDF文件第5页 
TSF10H45C thru TSF10H60C  
Taiwan Semiconductor  
Trench Schottky Rectifier  
FEATURES  
- Patented Trench Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Low power loss/ high efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
ITO-220AB  
TYPICAL APPLICATIONS  
Trench Schottky barrier rectifier are designed for high frequency  
miniature switched mode power supplies such as adapters, lighting  
and on-board DC/DC converters.  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 0.56 Nm max.  
Weight: 1.7 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
TSF10H45C  
TSF10H60C  
UNIT  
Maximum repetitive peak reverse voltage  
45  
60  
V
A
per device  
per diode  
10  
5
Maximum average forward rectified  
current  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
100  
A
Voltage rate of change (Rated VR)  
10000  
dV/dt  
V/μs  
Min.  
Typ. Max.  
Min.  
Typ. Max.  
IF = 2.5A  
-
-
-
-
-
-
0.44  
0.48  
0.33  
0.40  
-
-
-
-
-
-
-
-
0.46  
0.54  
0.38  
0.48  
-
-
TJ = 25°C  
IF = 5A  
IF = 2.5A  
IF = 5A  
0.58  
-
0.62  
-
Instantaneous forward voltage per diode  
( Note1 )  
VF  
V
TJ = 125°C  
0.50  
500  
15  
0.56  
500  
25  
TJ = 25°C  
μA  
Instantaneous reverse current per diode at rated  
reverse voltage  
IR  
TJ = 125°C  
5
6
mA  
OC/W  
OC  
OC  
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
5.5  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle  
Document Number: DS_D1411056  
Version: E14  

与TSF10H45C相关器件

型号 品牌 获取价格 描述 数据表
TSF10H60C TSC

获取价格

Trench Schottky Rectifier
TSF10L100CW TSC

获取价格

10A, 100V - 200V Trench Schottky Rectifiers
TSF10L200CW TSC

获取价格

10A, 100V - 200V Trench Schottky Rectifiers
TSF10N60M ETC

获取价格

600V N-Channel MOSFET
TSF10N60M TRUESEMI

获取价格

TO-220F
TSF10N65M TRUESEMI

获取价格

TO-220F
TSF10N80M TRUESEMI

获取价格

TO-220F
TSF10U60C TSC

获取价格

Trench MOS Barrier Schottky Rectifier
TSF11 ADAM-TECH

获取价格

Modular Terminal Block, 10A, 1 Deck(s)
TSF11 TAITRON

获取价格

1.0A Super Fast Recovery Rectifier