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TSF10H200C PDF预览

TSF10H200C

更新时间: 2024-09-24 01:08:23
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描述
Trench Schottky Rectifier

TSF10H200C 数据手册

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TSF10H100C thru TSF10H200C  
Taiwan Semiconductor  
Trench Schottky Rectifier  
FEATURES  
- Patented Trench Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Low power loss/ high efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
ITO-220AB  
- Halogen-free according to IEC 61249-2-21 definition  
TYPICAL APPLICATIONS  
Trench Schottky barrier rectifier are designed for high frequency  
miniature switched mode power supplies such as adapters,  
lighting and on-board DC/DC converters.  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 0.56 Nm max.  
Weight: 1.7 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
TSF10H  
100C  
100  
TSF10H  
120C  
120  
TSF10H  
150C  
150  
TSF10H  
200C  
200  
PARAMETER  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
V
A
per device  
per diode  
10  
5
Maximum average forward  
rectified current  
IF(AV)  
Peak forward surge current, 8.3ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
100  
A
Voltage rate of change (Rated VR)  
10000  
dV/dt  
V/μs  
TYP  
MAX  
0.70  
0.63  
100  
15  
TYP  
MAX  
TYP  
MAX  
0.88  
0.72  
100  
10  
TYP  
MAX  
0.91  
0.75  
100  
10  
IF = 5A  
IF = 5A  
TJ = 25°C  
0.62  
0.66  
0.74  
0.66  
100  
15  
0.78  
0.64  
-
0.81  
0.67  
-
Instantaneous forward  
voltage per diode (Note1)  
VF  
IR  
V
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
0.55  
0.58  
-
-
-
-
μA  
mA  
°C/W  
°C  
Instantaneous reverse current per  
diode at rated reverse voltage  
1.5  
1.5  
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
4
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with pulse width=300μs, 1% duty cycle  
Document Number: DS_D1411070  
Version: H14  

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