TSAL4400

更新时间： 2024-09-08 22:41:59

品牌	Logo	应用领域
威世 - VISHAY		半导体红外LED 光电二极管
页数	文件大小	规格书
5页	84K
描述
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package

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TSAL4400 数据手册

TSAL4400

Vishay Telefunken

GaAs/GaAlAs IR Emitting Diode in ø 3 mm (T–1)

Package

94 8488

Description

TSAL4400 is a high efficiency infrared emitting diode

in GaAlAs on GaAs technology, molded in clear, blue-

grey tinted plastic packages.

In comparison with the standard GaAs on GaAs

technology these emitters achieve about 100 % ra-

diant power improvement at a similar wavelength.

The forward voltages at low current and at high pulse

current roughly correspond to the low values of the

standard technology. Therefore these emitters are

ideally suitable as high performance replacements of

standard emitters.

Features

Extra high radiant power

Low forward voltage

Suitable for high pulse current operation

Standard T–1 (ø 3 mm) package

Angle of half intensity ϕ = ± 25

Peak wavelength = 940 nm

High reliability

Good spectral matching to Si photodetectors

Applications

Infrared remote control units

Free air transmission systems

Infrared source for optical counters and card readers

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

100

200

1.5

210

K/W

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

t /T = 0.5, t = 100 s

t = 100 s

FSM

100

–55...+100

260

amb

stg

5sec, 2 mm from case

350

thJA

Document Number 81006

Rev. 3, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

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