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TP2104

更新时间： 2024-11-24 22:19:19

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	457K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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TP2104

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Product marking for SOT-23:

P1L❋

Order Number/Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

BV_DGS

TO-236AB*

TO-92

Die

-40V

6.0Ω

-2.0V

TP2104K1

TP2104N3

TP2104ND

where ❋ = 2-week alpha date code

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Features

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

High input impedance and high gain

Complementary N- and P-channel devices

Package Options

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

S G

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

TO-236AB

(SOT-23)

top view

TO-92

BV_DGS

± 20V

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TP2104相关器件

型号	品牌	获取价格	描述	数据表
TP2104K1	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2104K1-G	MICROCHIP	获取价格	160mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
TP2104K1-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104K1-G-P003	MICROCHIP	获取价格	Small Signal Field-Effect Transistor
TP2104N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2104N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3-GP002	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2104N3-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2104N3-GP013	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2104N3-GP014	MICROCHIP	获取价格	SMALL SIGNAL, FET

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