Datasheet > TP2104N3-GP013

TP2104N3-GP013

更新时间： 2024-11-25 21:06:43

品牌	Logo	应用领域
美国微芯 - MICROCHIP		开关晶体管
页数	文件大小	规格书
6页	721K
描述
SMALL SIGNAL, FET

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中文翻译

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技术参数
数据手册

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TP2104N3-GP013 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	CYLINDRICAL, O-PBCY-T3	Reach Compliance Code：	compliant
风险等级：	5.63	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	40 V	最大漏极电流 (ID)：	0.175 A
最大漏源导通电阻：	6 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	10 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	P-CHANNEL
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TP2104N3-GP013 数据手册

Supertex inc.

TP2104

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► High input impedance and high gain

► Low power drive requirement

► Ease of paralleling

This low threshold, enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-

proven, silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities of

bipolar transistors and the high input impedance and positive

temperature coefﬁcient inherent in MOS devices. Characteristic

of all MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► Free from secondary breakdown

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Logic level interfaces - ideal for TTL and CMOS

► Solid state relays

► Analog switches

► Power management

► Telecom switches

Ordering Information

Product Summary

R_DS(ON)

Part Number

Package Option

Packing

V_GS(th)

(max)

BV_DSS/BV_DGS

(max)

TP2104K1-G

TO-236AB (SOT-23) 3000/Reel

-40V

6.0Ω

-2.0V

TP2104N3-G

3-Lead TO-92

1000/Bag

2000/Reel

TP2104N3-G P002

TP2104N3-G P003

Pin Conﬁguration

DRAIN

TP2104N3-G P005 3-Lead TO-92

TP2104N3-G P013

TP2104N3-G P014

DRAIN

SOURCE

GATE

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

GATE

TO-236AB (SOT-23)

TO-92

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±20V

Product Marking

Drain-to-source voltage

Drain-to-gate voltage

W = Code for week sealed

= “Green” Packaging

P1LW

Gate-to-source voltage

Package may or may not include the following marks: Si or

Operating and storage temperature

-55^OC to +150^OC

TO-236AB (SOT-23)

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

SiTP

2 1 0 4

YYWW

YY = Year Sealed

WW = Week Sealed

Typical Thermal Resistance

= “Green” Packaging

Package

θ_ja

Package may or may not include the following marks: Si or

203^OC/W

132^OC/W

TO-92

TO-236AB (SOT-23)

TO-92

Doc.# DSFP-TP2104

B081313

Supertex inc.

www.supertex.com

12 3 4 5 6

中文翻译

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与TP2104N3-GP013相关器件

型号	品牌	获取价格	描述	数据表
TP2104N3-GP014	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2104N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
TP2104N3P015	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta

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