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TP0610T-1T2 PDF预览

TP0610T-1T2

更新时间: 2024-11-15 18:37:55
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
3页 68K
描述
Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

TP0610T-1T2 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.25
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.12 A最大漏源导通电阻:10 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

TP0610T-1T2 数据手册

 浏览型号TP0610T-1T2的Datasheet PDF文件第2页浏览型号TP0610T-1T2的Datasheet PDF文件第3页 

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