生命周期: | Active | 包装说明: | SM3, 4 PIN |
Reach Compliance Code: | compliant | 风险等级: | 5.17 |
其他特性: | I/P POWER-MAX (PEAK)=23DBM | 构造: | COMPONENT |
增益: | 12 dB | 最大输入功率 (CW): | 13 dBm |
最大工作频率: | 250 MHz | 最小工作频率: | 10 MHz |
最高工作温度: | 85 °C | 最低工作温度: | -55 °C |
射频/微波设备类型: | WIDE BAND MEDIUM POWER | 最大电压驻波比: | 2 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TN41A | TOSHIBA |
获取价格 |
THRISTOR TRIGGER RELAXATION OSCILLATOR PULSER AND TIMER APPLICATIONS | |
TN41B | TOSHIBA |
获取价格 |
THRISTOR TRIGGER RELAXATION OSCILLATOR PULSER AND TIMER APPLICATIONS | |
TN4234 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237 | |
TN4235 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-237 | |
TN4236 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-237 | |
TN4-25702 | ETC |
获取价格 |
TN4-25702(TSX-8A type) | |
TN431-14 | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,1.4KV V(DRM),430A I(T),TO-200AB | |
TN431-20 | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,2KV V(DRM),430A I(T),TO-200AB | |
TN4314 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 1A I(C) | TO-237 | |
TN432-01 | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,100V V(DRM),525A I(T),TO-200AB |