是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-92 | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.83 |
Is Samacsys: | N | 阳极到阴极的最大电压: | 40 V |
配置: | SINGLE | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最大通态电流: | 150 A | 最高工作温度: | 125 °C |
最低工作温度: | -50 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值电流最大值: | 2 µA | 最大功率耗散: | 0.3 W |
认证状态: | Not Qualified | 子类别: | Programmable Unijunction Transistors |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
触发设备类型: | PROGRAMMABLE UJT | Valley Current-Min: | 70 µA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TN41B | TOSHIBA |
获取价格 |
THRISTOR TRIGGER RELAXATION OSCILLATOR PULSER AND TIMER APPLICATIONS | |
TN4234 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237 | |
TN4235 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-237 | |
TN4236 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-237 | |
TN4-25702 | ETC |
获取价格 |
TN4-25702(TSX-8A type) | |
TN431-14 | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,1.4KV V(DRM),430A I(T),TO-200AB | |
TN431-20 | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,2KV V(DRM),430A I(T),TO-200AB | |
TN4314 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 1A I(C) | TO-237 | |
TN432-01 | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,100V V(DRM),525A I(T),TO-200AB | |
TN432-02 | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,200V V(DRM),525A I(T),TO-200AB |