TN2510

更新时间： 2024-11-07 22:42:07

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	478K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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TN2510 数据手册

TN2510

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

V_GS(th)

I_D(ON)

(min)

Die^†

BV_DGS

(max)

TO-243AA*

100V

1.5Ω

2.0V

3.0A

TN2510N8

TN2510ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

^†MIL visual screening available.

Product marking for TO-243AA:

TN5A❋

Where❋=2-weekalphadatecode

Features

❏

Low threshold —2.0V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Package Option

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

TO-243AA

(SOT-89)

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TN2510相关器件

型号	品牌	获取价格	描述	数据表
TN2510N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2510ND	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN25-15-10	FERROXCUBE	获取价格	Ferrite toroids
TN2520N8-G	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TN2524	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TN2524_07	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2524N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524N8-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2524ND	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs

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