Datasheet > TN0602WG

TN0602WG

更新时间： 2024-11-11 23:36:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	35K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| SO

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中文翻译

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数据手册

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TN0602WG 数据手册

TN0602

TN0604

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

V_GS(th)

(max)

BV_DGS

TO-92

—

SOW-20*

20V

0.75Ω

1.0Ω

4.0A

1.6V

—

40V

TN0604N3

—

40V

TN0604WG

* Same as SO-20 with 300 mil wide body.

Features

Low Threshold DMOS Technology

Low threshold — 1.6V max.

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

High input impedance

Low input capacitance — 140pF typical

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Package Options

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

S G D

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

SOW-20

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Notes:

1. See Package Outline section for dimensions.

2. See Array section for quad pinouts.

Distance of 1.6 mm from case for 10 seconds.

7-47

12 3 4

中文翻译

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TN0604N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
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TN0604N3-GP002	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
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