5秒后页面跳转
捷配首页

Datasheet > TN0604WG
TN0604WG PDF预览

TN0604WG

更新时间： 2024-11-11 22:42:07
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 45K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

TN0604WG 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SMALL OUTLINE, R-PDSO-G20
针数：20Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.85其他特性：LOGIC LEVEL COMPATIBLE
配置：SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (ID)：1 A最大漏源导通电阻：1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G20
JESD-609代码：e0元件数量：4
端子数量：20工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：1.5 W最大功率耗散 (Abs)：1.5 W
最大脉冲漏极电流 (IDM)：4 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

TN0604WG 数据手册

 浏览型号TN0604WG的Datasheet PDF文件第2页浏览型号TN0604WG的Datasheet PDF文件第3页浏览型号TN0604WG的Datasheet PDF文件第4页 
TN0604  
Low Threshold  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
(max)  
ID(ON)  
(min)  
VGS(th)  
(max)  
BVDGS  
40V  
TO-92  
TN0604N3  
—
SOW-20*  
—
0.75Ω  
1.0Ω  
4.0A  
4.0A  
1.6V  
1.6V  
40V  
TN0604WG  
* Same as SO-20 with 300 mil wide body.  
Features  
❏ Low threshold — 1.6V max.  
Low Threshold DMOS Technology  
These low threshold enhancement-mode (normally-off) transis-  
tors utilize a vertical DMOS structure and Supertex's well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
❏ High input impedance  
❏ Low input capacitance — 140pF typical  
❏ Fast switching speeds  
❏ Low on resistance  
❏ Free from secondary breakdown  
❏ Low input and output leakage  
❏ Complementary N- and P-channel devices  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, highbreakdownvoltage, highinputimpedance, lowinput  
capacitance, and fast switching speeds are desired.  
Applications  
❏ Logic level interfaces – ideal for TTL and CMOS  
Package Options  
❏ Solid state relays  
❏ Battery operated systems  
❏ Photo voltaic drives  
❏ Analog switches  
❏ General purpose line drivers  
❏ Telecom switches  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
S G D  
BVDSS  
BVDGS  
± 20V  
SOW-20  
TO-92  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
Notes:  
1. See Package Outline section for dimensions.  
2. See Array section for quad pinouts.  
*
Distance of 1.6 mm from case for 10 seconds.  
02/06/02  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

下载PDF

与TN0604WG相关器件

型号 品牌 获取价格 描述 数据表
TN0604WG-G SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN0606 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FETs
TN0606 MICROCHIP

获取价格

 		This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TN0606_13 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN0606N2 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0606N3 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FETs
TN0606N3-G MICROCHIP

获取价格

 		500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TN0606N3-G SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0606N3-GP002 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN0606N3-GP003 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET

与TN0604WG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证