TM124FBK32-60L

更新时间： 2024-11-06 13:14:51

品牌	Logo	应用领域
德州仪器 - TI		存储内存集成电路动态存储器
页数	文件大小	规格书
11页	161K
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数据手册

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TM124FBK32-60L 数据手册

TM124FBK32, TM124FBK32S 1048576 BY 32-BIT

TM248GBK32, TM248GBK32S 2097152 BY 32-BIT

DYNAMIC RAM MODULES

SMMS664A – DECEMBER 1995 – REVISED JUNE 1996

Organization

Presence Detect

TM124FBK32 . . . 1 048 576 × 32

TM248GBK32 . . . 2 097 152 × 32

Performance Ranges:

ACCESS ACCESS ACCESS EDO

Single 5-V Power Supply

TIME

TIME CYCLE

72-pin Single In-Line Memory Module

(SIMM) for Use With Sockets

HPC

RAC

CAC

(MIN) (MIN)

(MAX)

60 ns

70 ns

80 ns

60 ns

70 ns

80 ns

(MAX)

30 ns

35 ns

40 ns

30 ns

35 ns

40 ns

’124FBK32-60

’124FBK32-70

’124FBK32-80

’248GBK32-60

’248GBK32-70

’248GBK32-80

15 ns

18 ns

20 ns

15 ns

18 ns

20 ns

25 ns

30 ns

35 ns

25 ns

30 ns

35 ns

TM124FBK32 Utilizes Eight 4M-Bit Dynamic

RAMs (DRAMs) in Plastic Small-Outline

J-Lead (SOJ) Packages

TM248GBK32 Utilizes Sixteen 4M-Bit

DRAMs in Plastic SOJ Packages

Long Refresh Period

16 ms (1024 Cycles)

Low Power Dissipation

All Inputs, Outputs, Clocks Fully TTL

Compatible

Operating Free-Air Temperature

Range . . . 0°C to 70°C

†

3-State Output

Gold-Tabbed Versions Available:

– TM124FBK32

– TM248GBK32

Common CAS Control for Eight Common

Data-In and Data-Out Lines, In Four Blocks

Tin-Lead- (Solder-) Tabbed Versions

Available:

– TM124FBK32S

Extended Data-Out (EDO) Operation With

CAS-Before-RAS (CBR), RAS-Only, and

Hidden Refresh

– TM248GBK32S

JEDEC First Generation 72-Pin SIMM

Pinout

description

TM124FBK32

The TM124FBK32 is a 4M-byte DRAM organized as four times 1 048 576 × 8 in a 72-pin leadless SIMM. The

SIMM is composed of eight TMS44409, 1 048 576 × 4-bit DRAMs, each in a 20/26-lead plastic SOJ package,

mounted on a substrate together with decoupling capacitors. Each TMS44409 is described in the TMS44409

data sheet. The TM124FBK32 is available in the single-sided BK leadless module for use with sockets.

TM248GBK32

The TM248GBK32 is a 8M-byte DRAM organized as four times 2 097 152 × 8 in a 72-pin leadless SIMM. The

SIMM is composed of sixteen TMS44409, 1 048 576 × 4-bit DRAMs, each in a 20/26-lead plastic SOJ package,

mounted on a substrate together with decoupling capacitors. Each TMS44409 is described in the TMS44409

data sheet. The TM248GBK32 is available in the double-sided BK leadless module for use with sockets.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

†

Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

12 3 4 5 6 7...11

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与TM124FBK32-60L相关器件

型号	品牌	获取价格	描述	数据表
TM124FBK32-70	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32-80	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32F	TI	获取价格	DYNAMIC RAM MODULE
TM124FBK32F-70	TI	获取价格	1MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72
TM124FBK32H	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32H-60	TI	获取价格	1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM124FBK32I-70	TI	获取价格	1MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72
TM124FBK32S-60	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32S-60L	TI	获取价格	1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM124FBK32S-70	TI	获取价格	DYNAMIC RAM MODULES

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