Datasheet > TM124FBK32F

TM124FBK32F

更新时间： 2024-11-06 11:58:39

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
9页	141K
描述
DYNAMIC RAM MODULE

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中文翻译

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数据手册

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TM124FBK32F 数据手册

TM124FBK32F, TM124FBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE

TM248GBK32F, TM248GBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE

SMMS660 – MARCH 1996

Organization

Presence Detect

TM124FBK32F . . . 1 048 576 × 32

TM248GBK32F . . . 2 097 152 × 32

JEDEC First Generation 72-Pin SIMM

Pinout

Single 5-V Power Supply (±10% Tolerance)

Performance Ranges:

72-Pin Single In-Line Memory Module

(SIMM) for Use With Socket

ACCESS ACCESS ACCESS EDO

TIME

TIME CYCLE

RAC

CAC

HPC

TM124FBK32F – Utilizes Two 16M-Bit

Dynamic Random-Access Memories

(DRAMs) in Plastic Small-Outline J-Lead

(SOJ) Package

(MAX)

’124FBK32F-60 60 ns

’124FBK32F-70 70 ns

’124FBK32F-80 80 ns

’248GBK32F-60 60 ns

’248GBK32F-70 70 ns

’248GBK32F-80 80 ns

(MAX)

30 ns

35 ns

40 ns

30 ns

35 ns

40 ns

(MAX)

15 ns

18 ns

20 ns

15 ns

18 ns

20 ns

(MIN)

25 ns

30 ns

35 ns

25 ns

30 ns

35 ns

TM248GBK32F – Utilizes Four 16M-Bit

DRAMs in Plastic SOJ Package

Long Refresh Period

16 ms (1024 Cycles)

Low Power Dissipation

All Inputs, Outputs, Clocks Fully

TTL-Compatible

Operating Free-Air Temperature Range

0°C to 70°C

†

3-State Output

Gold-Tabbed Versions Available:

TM124FBK32F

TM248GBK32F

Common CAS Control for Eight Common

Data-In and Data-Out Lines in Four Blocks

Tin-Lead Solder-Tabbed Versions Available:

TM124FBK32U

Extended Data Out (EDO) Operation With

CAS-Before-RAS (CBR), RAS-Only, Hidden

Refresh, and Self Refresh

TM248GBK32U

description

TM124FBK32F

The TM124FBK32F is a 4M-byte DRAM organized as four times 1048576 × 8 in a 72-pin SIMM. The SIMM is

composed of two TMS418169DZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package mounted

on a substrate with decoupling capacitors. The TMS418169DZ is described in the TMS418169 data sheet

(literature number SMKS886). The TM124FBK32F SIMM is available in the single-sided BK-leadless module

for use with sockets.

TM248GBK32F

The TM248GBK32F is an 8M-byte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM

iscomposedoffourTMS418169DZ1 048 576× 16-bitDRAMs, eachina42-leadplasticSOJpackagemounted

on a substrate with decoupling capacitors. The TMS418169DZ is described in the TMS418169 data sheet

(literature number SMKS886). The TM248GBK32F SIMM is available in the double-sided BK-leadless module

for use with sockets.

operation

The TM124FBK32F operates as two TMS418169DZs connected as shown in the functional block diagram and

in Table 1. The TM248GBK32F operates as four TMS418169DZs connected as shown in the functional block

diagram and in Table 1. The common I/O feature dictates the use of early-write cycles to prevent contention

on D and Q.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

†

Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

12 3 4 5 6 7...9

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与TM124FBK32F相关器件

型号	品牌	获取价格	描述	数据表
TM124FBK32F-70	TI	获取价格	1MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72
TM124FBK32H	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32H-60	TI	获取价格	1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM124FBK32I-70	TI	获取价格	1MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72
TM124FBK32S-60	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32S-60L	TI	获取价格	1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM124FBK32S-70	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32S-80	TI	获取价格	DYNAMIC RAM MODULES
TM124FBK32U-60	TI	获取价格	1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM124GU8A	TI	获取价格	1 048 576-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULE

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